P-Channel 60V 18A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D²PAK (TO-263)
P-Channel 60V 18A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D²PAK (TO-263)
P-Channel 60V 18A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D²PAK (TO-263)
MOSFET P-CH 60V 18A D2PAK
Manufacturer: Vishay
Win Source Part Number: 017569-IRF9Z34STRLPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Family Name: IRF9Z34S
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 34nC @ 10V
Max Input Capacitance: 1100pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 140 mOhm @ 11A, 10V
Alternative Parts (Cross-Reference): IRF9Z34NSTRLPBF; IRF9Z34NS; MTB23P06E; IRF9Z34NSPbF;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance
MOSFET P-CH 60V 18A D2PAK
MOSFET, P CH, -60V, -18A, TO-263-3; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
P CHANNEL MOSFET, -60V, 18A, D2-PAK, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF9Z34STRLPBFTR-ND | IRF9Z34STRLPBF | 017569-IRF9Z34STRLPBF | IRF9Z34STRLPBF | IRF9Z34STRLPBF | 05W6873 | 31K2315 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z34STRLPBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P Ch, -60V, -18A, To-263-3; Channel Type Vishay | P Channel Mosfet, -60V, 18A, D2-Pak, Full Reel; Channel Type Vishay |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | |||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263 | TO-3 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | 60 volts |
