The Vishay P-Channel MOSFET, part number 06AJ9169, features a maximum drain-source voltage (Vds) of -60V and a continuous drain current (Id) rating of -18A at a case temperature of 25¬8C. It is housed in a TO-220AB package, which is known for its low thermal resistance and suitability for commercial and industrial applications. The device has a low on-resistance (Rds(on)) of 0.14Oc when tested at a gate-source voltage (Vgs) of -10V, contributing to its efficiency in power applications. This MOSFET is designed for fast switching and has a maximum power dissipation of 88W at 25¬8C. It also supports a wide operating temperature range from -55¬8C to +175¬8C, making it versatile for various environments. The total gate charge (Qg) is specified at a maximum of 34nC, which indicates its suitability for applications requiring quick response times. Additionally, it is rated for repetitive avalanche conditions, enhancing its reliability in demanding applications. Engineers considering this MOSFET should evaluate its specifications against their project requirements, particularly in terms of voltage, current handling, and thermal management.
P-Channel 60V 18A (Tc) 88W (Tc) Through Hole TO-220AB
MOSFET, P-CH, 60V, 18A, TO-220AB; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET P-CH 60V 18A TO220AB
| DigiKey | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 742-IRF9Z34PBF-BE3-ND | 06AJ9169 | IRF9Z34PBF-BE3 |
| Product Name | Single FETs, MOSFETs | Mosfet, P-Ch, 60V, 18A, To-220Ab; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel |
