Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z24SPBF IRF9Z24SPBF

Description
Manufacturer: Vishay Win Source Part Number: 205332-IRF9Z24SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 570pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 280 mOhm @ 6.6A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 205332-IRF9Z24SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 570pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 280 mOhm @ 6.6A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z24SPBF - 205332-IRF9Z24SPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z24SPBF
205332-IRF9Z24SPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z24SPBF 205332-IRF9Z24SPBF
Manufacturer: Vishay Win Source Part Number: 205332-IRF9Z24SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 570pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 280 mOhm @ 6.6A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 205332-IRF9Z24SPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 570pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 280 mOhm @ 6.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
MOSFETs - 1808310 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808310
MOSFETs 1808310
P channel ;VBRDSS -60 V; RDSon 280 mOh

P channel ;VBRDSS -60 V; RDSon 280 mOh

Supplier's Site
MOSFETs - 1808832 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808832
MOSFETs 1808832
P channel ;VBRDSS -60 V; RDSon 280 mOh

P channel ;VBRDSS -60 V; RDSon 280 mOh

Supplier's Site
Single FETs, MOSFETs - IRF9Z24SPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF9Z24SPBF-ND
Single FETs, MOSFETs IRF9Z24SPBF-ND
P-Channel 60V 11A (Tc) 3.7W (Ta), 60W (Tc) Surface Mount D²PAK (TO-263)

P-Channel 60V 11A (Tc) 3.7W (Ta), 60W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET P-CH -60V HEXFET MOSFET

MOSFET P-CH -60V HEXFET MOSFET

Buy Now Datasheet
MOSFET P-CH 60V 11A D2PAK - 880-IRF9Z24SPBF - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 60V 11A D2PAK
880-IRF9Z24SPBF
MOSFET P-CH 60V 11A D2PAK 880-IRF9Z24SPBF
MOSFET P-CH 60V 11A D2PAK

MOSFET P-CH 60V 11A D2PAK

Supplier's Site
Mosfet, P, 60V, D2-Pak; Channel Type Vishay - 25M9847 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P, 60V, D2-Pak; Channel Type Vishay
25M9847
Mosfet, P, 60V, D2-Pak; Channel Type Vishay 25M9847
MOSFET, P, 60V, D2-PAK; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:60W RoHS Compliant: Yes

MOSFET, P, 60V, D2-PAK; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:60W RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF9Z24SPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF9Z24SPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF9Z24SPBF
MOSFET P-CH 60V 11A D2PAK

MOSFET P-CH 60V 11A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics RS Components, Ltd. DigiKey VAST STOCK CO., LIMITED Utmel Electronic Limited Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 205332-IRF9Z24SPBF 1808310 IRF9Z24SPBF-ND IRF9Z24SPBF 880-IRF9Z24SPBF 25M9847 IRF9Z24SPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z24SPBF MOSFETs Single FETs, MOSFETs MOSFET MOSFET P-CH 60V 11A D2PAK Mosfet, P, 60V, D2-Pak; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 60 volts -60 volts
PD 3700 to 60000 milliwatts 60000 milliwatts 60000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-263; SOT3; D2PAK TO-263; TO-263 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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