P channel ;VBRDSS -60 V; RDSon 280 mOh
P channel ;VBRDSS -60 V; RDSon 280 mOh
P-Channel 60V 11A (Tc) 3.7W (Ta), 60W (Tc) Surface Mount D²PAK (TO-263)
P-Channel MOSFET, 60V, 11A, 280mR, D2PAK, Surface Mount Product overview: IRF9Z24SPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, 60V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 60V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF9Z24SPBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 205332-IRF9Z24SPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 570pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 280 mOhm @ 6.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
MOSFET, P, 60V, D2-PAK; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:60W RoHS Compliant: Yes
MOSFET P-CH 60V 11A D2PAK
MOSFET P-CH 60V 11A D2PAK
| RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1808310 | IRF9Z24SPBF-ND | 278-IRF9Z24SPBF | 205332-IRF9Z24SPBF | 25M9847 | 880-IRF9Z24SPBF | IRF9Z24SPBF | IRF9Z24SPBF |
| Product Name | MOSFETs | Single FETs, MOSFETs | P-Channel SMD 60V 11A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z24SPBF | Mosfet, P, 60V, D2-Pak; Channel Type Vishay | MOSFET P-CH 60V 11A D2PAK | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Package Type | TO-263; TO-263 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | TO-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | |||
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | |||||
| PD | 3700 milliwatts | 3700 to 60000 milliwatts | 60000 milliwatts | 60000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| V(BR)DSS | 60 volts | -60 volts |
