Manufacturer: Vishay
Win Source Part Number: 1046794-IRF9Z20PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 9.7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 480pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 280 mOhm @ 5.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
P-Channel 50V 9.7A (Tc) 40W (Tc) Through Hole TO-220AB
MOSFET P-Channel 50V 9.7A TO-220AB
MOSFET P-Channel 50V 9.7A TO-220AB
MOSFET P-Channel 50V 9.7A TO-220AB
MOSFET P-CH 50V 9.7A TO220AB
MOSFET, P-CH, 50V, 9.7A, TO-220 ROHS COMPLIANT: YES
MOSFET, P-CHANNEL, 50V, 9.7 AMP, TO-220 AB, THROUGH HOLE, ROHS3 COMPLIANT. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Radwell International | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1046794-IRF9Z20PBF | IRF9Z20PBF-ND | 8152682 | 8152682P | IRF9Z20PBF | IRF9Z20PBF | 56AJ9924 | 16352545 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z20PBF | Single FETs, MOSFETs | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P-Ch, 50V, 9.7A, To-220 Rohs Compliant Vishay | Transistor |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | ||||
| V(BR)DSS | 50 volts | |||||||
| PD | 40000 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) |
