Vishay Intertechnology, Inc. Single FETs, MOSFETs IRF9Z14LPBF

Description
P-Channel 60V 6.7A (Tc) 3.7W (Ta), 43W (Tc) Through Hole I2PAK
Request a Quote Datasheet
Description
P-Channel 60V 6.7A (Tc) 3.7W (Ta), 43W (Tc) Through Hole I2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF9Z14LPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF9Z14LPBF-ND
Single FETs, MOSFETs IRF9Z14LPBF-ND
P-Channel 60V 6.7A (Tc) 3.7W (Ta), 43W (Tc) Through Hole I2PAK

P-Channel 60V 6.7A (Tc) 3.7W (Ta), 43W (Tc) Through Hole I2PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z14LPBF - 1046791-IRF9Z14LPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z14LPBF
1046791-IRF9Z14LPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z14LPBF 1046791-IRF9Z14LPBF
Manufacturer: Vishay Win Source Part Number: 1046791-IRF9Z14LPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 6.7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 270pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 500 mOhm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1046791-IRF9Z14LPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 6.7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 270pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 500 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

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MOSFET P-CH 60V 6.7A TO-262 - 880-IRF9Z14LPBF - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 60V 6.7A TO-262
880-IRF9Z14LPBF
MOSFET P-CH 60V 6.7A TO-262 880-IRF9Z14LPBF
MOSFET P-CH 60V 6.7A TO-262

MOSFET P-CH 60V 6.7A TO-262

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF9Z14LPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF9Z14LPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF9Z14LPBF
MOSFET P-CH 60V 6.7A I2PAK

MOSFET P-CH 60V 6.7A I2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET P-Chan 60V 6.7 Amp

MOSFET P-Chan 60V 6.7 Amp

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Technical Specifications

  DigiKey Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRF9Z14LPBF-ND 1046791-IRF9Z14LPBF 880-IRF9Z14LPBF IRF9Z14LPBF IRF9Z14LPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z14LPBF MOSFET P-CH 60V 6.7A TO-262 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel; P-Channel
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA SOT3; I2PAK TO-262-3 Long Leads, I2PAK, TO-262AA
V(BR)DSS 60 volts
PD 3700 to 43000 milliwatts 3700 milliwatts
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