P-Channel MOSFET, 6.7A ID, -60V Vdss, 500mR Rds On, TO-220AB Product overview: IRF9Z10PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 6.7A, -60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 6.7A, -60V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF9Z10PBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 130235-IRF9Z10PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 43W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 6.7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 270pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 500 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
MOSFET P-CH 60V 6.7A TO220AB
P-Channel 60V 6.7A (Tc) 43W (Tc) Through Hole TO-220AB
P CHANNEL MOSFET, -60V, 6.7A; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:6.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. of Pins:3PinsRoHS Compliant: Yes
MOSFET RECOMMENDED ALT 844-IRF9Z10
MOSFET P-CH 60V 6.7A TO220AB
MOSFET P-CH 60V 6.7A TO220AB
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRF9Z10PBF | 130235-IRF9Z10PBF | IRF9Z10PBF | IRF9Z10PBF-ND | 31K2313 | IRF9Z10PBF | 880-IRF9Z10PBF | IRF9Z10PBF |
| Product Name | P-Channel 6.7A -60V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z10PBF | Single FETs, MOSFETs | Single FETs, MOSFETs | P Channel Mosfet, -60V, 6.7A; Channel Type Vishay | MOSFET | MOSFET P-CH 60V 6.7A TO220AB | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| PD | 43000 milliwatts | 43000 milliwatts | 43000 milliwatts | 43000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3 | TO-220; TO-220-3 |
