P-Channel 200V 11A (Tc) 125W (Tc) Through Hole TO-220AB
MOSFET P-CH 200V 11A TO220AB
Manufacturer: Vishay
Win Source Part Number: 017561-IRF9640PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 44nC @ 10V
Max Input Capacitance: 1200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 500 mOhm @ 6.6A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management
P CHANNEL MOSFET, -200V, -11A, TO-220AB; TRANSISTOR POLARITY:P CHANNEL; CONTINUOUS DRAIN CURRENT ID:-11A; DRAIN SOURCE VOLTAGE VDS:-200V; ON RESISTANCE RDS(ON):0.5OHM; RDS(ON) TEST VOLTAGE VGS:-10V; THRESHOLD VOLTAGE VGS:-4V; MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET P-CH 200V 11A TO220AB
200V 11A 500mΩ@10V,6.6A 125W 4V@250uA P Channel TO-220AB MOSFETs ROHS
MOSFET, Power;P-Ch;VDSS -200V;RDS(ON) 0.5Ohm;ID -11A;TO-220AB;PD 125W;VGS +/-20V
P CHANNEL MOSFET, -200V, -11A, TO-220AB; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET Transistor, P Channel, 11 A, 200 V, 500 mohm, -10 V, -4 V RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | Radwell International | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | Allied Electronics, Inc. | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF9640PBF-ND | IRF9640PBF | 017561-IRF9640PBF | 16352497 | IRF9640PBF | IRF9640PBF | 70078877 | 63J7436 | 38K2873 | IRF9640PBF |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9640PBF | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET, Power;P-Ch;VDSS -200V;RDS(ON) 0.5Ohm;ID -11A;TO-220AB;PD 125W;VGS +/-20V | P Channel Mosfet, -200V, -11A, To-220Ab; Channel Type Vishay | Mosfet Transistor, P Channel, 11 A, 200 V, 500 Mohm, -10 V, -4 V Rohs Compliant Vishay | MOSFET |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | 1200 pF @ 25 V | TO-220 | TO-220 | TO-3; TO-220 | TO-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | -200 volts | ||||||
| IDSS | 11000 milliamps | 11000 milliamps |