Vishay Precision Group Single FETs, MOSFETs IRF9640PBF

Description
P-Channel 200V 11A (Tc) 125W (Tc) Through Hole TO-220AB
Request a Quote Datasheet
Description
P-Channel 200V 11A (Tc) 125W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF9640PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF9640PBF-ND
Single FETs, MOSFETs IRF9640PBF-ND
P-Channel 200V 11A (Tc) 125W (Tc) Through Hole TO-220AB

P-Channel 200V 11A (Tc) 125W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Single FETs, MOSFETs - IRF9640PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF9640PBF
Single FETs, MOSFETs IRF9640PBF
MOSFET P-CH 200V 11A TO220AB

MOSFET P-CH 200V 11A TO220AB

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9640PBF - 017561-IRF9640PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9640PBF
017561-IRF9640PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9640PBF 017561-IRF9640PBF
Manufacturer: Vishay Win Source Part Number: 017561-IRF9640PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 44nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 500 mOhm @ 6.6A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance Application Field: Used in Power Management

Manufacturer: Vishay
Win Source Part Number: 017561-IRF9640PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 44nC @ 10V
Max Input Capacitance: 1200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 500 mOhm @ 6.6A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management

Buy Now Datasheet
Transistor - 16352497 - Radwell International
Willingboro, NJ, United States
Transistor
16352497
Transistor 16352497
P CHANNEL MOSFET, -200V, -11A, TO-220AB; TRANSISTOR POLARITY:P CHANNEL; CONTINUOUS DRAIN CURRENT ID:-11A; DRAIN SOURCE VOLTAGE VDS:-200V; ON RESISTANCE RDS(ON):0.5OHM; RDS(ON) TEST VOLTAGE VGS:-10V; THRESHOLD VOLTAGE VGS:-4V; MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

P CHANNEL MOSFET, -200V, -11A, TO-220AB; TRANSISTOR POLARITY:P CHANNEL; CONTINUOUS DRAIN CURRENT ID:-11A; DRAIN SOURCE VOLTAGE VDS:-200V; ON RESISTANCE RDS(ON):0.5OHM; RDS(ON) TEST VOLTAGE VGS:-10V; THRESHOLD VOLTAGE VGS:-4V; MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF9640PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF9640PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF9640PBF
MOSFET P-CH 200V 11A TO220AB

MOSFET P-CH 200V 11A TO220AB

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IRF9640PBF
Triode/MOS Tube/Transistor >> MOSFETs IRF9640PBF
200V 11A 500mΩ@10V,6.6A 125W 4V@250uA P Channel TO-220AB MOSFETs ROHS

200V 11A 500mΩ@10V,6.6A 125W 4V@250uA P Channel TO-220AB MOSFETs ROHS

Supplier's Site Datasheet
MOSFET, Power;P-Ch;VDSS -200V;RDS(ON) 0.5Ohm;ID -11A;TO-220AB;PD 125W;VGS +/-20V - 70078877 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;P-Ch;VDSS -200V;RDS(ON) 0.5Ohm;ID -11A;TO-220AB;PD 125W;VGS +/-20V
70078877
MOSFET, Power;P-Ch;VDSS -200V;RDS(ON) 0.5Ohm;ID -11A;TO-220AB;PD 125W;VGS +/-20V 70078877
MOSFET, Power;P-Ch;VDSS -200V;RDS(ON) 0.5Ohm;ID -11A;TO-220AB;PD 125W;VGS +/-20V

MOSFET, Power;P-Ch;VDSS -200V;RDS(ON) 0.5Ohm;ID -11A;TO-220AB;PD 125W;VGS +/-20V

Supplier's Site
P Channel Mosfet, -200V, -11A, To-220Ab; Channel Type Vishay - 63J7436 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -200V, -11A, To-220Ab; Channel Type Vishay
63J7436
P Channel Mosfet, -200V, -11A, To-220Ab; Channel Type Vishay 63J7436
P CHANNEL MOSFET, -200V, -11A, TO-220AB; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

P CHANNEL MOSFET, -200V, -11A, TO-220AB; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
Mosfet Transistor, P Channel, 11 A, 200 V, 500 Mohm, -10 V, -4 V Rohs Compliant Vishay - 38K2873 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, 11 A, 200 V, 500 Mohm, -10 V, -4 V Rohs Compliant Vishay
38K2873
Mosfet Transistor, P Channel, 11 A, 200 V, 500 Mohm, -10 V, -4 V Rohs Compliant Vishay 38K2873
MOSFET Transistor, P Channel, 11 A, 200 V, 500 mohm, -10 V, -4 V RoHS Compliant: Yes

MOSFET Transistor, P Channel, 11 A, 200 V, 500 mohm, -10 V, -4 V RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET P-CH -200V HEXFET MOSFET

MOSFET P-CH -200V HEXFET MOSFET

Buy Now Datasheet

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Radwell International Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited Allied Electronics, Inc. Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRF9640PBF-ND IRF9640PBF 017561-IRF9640PBF 16352497 IRF9640PBF IRF9640PBF 70078877 63J7436 38K2873 IRF9640PBF
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9640PBF Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs MOSFET, Power;P-Ch;VDSS -200V;RDS(ON) 0.5Ohm;ID -11A;TO-220AB;PD 125W;VGS +/-20V P Channel Mosfet, -200V, -11A, To-220Ab; Channel Type Vishay Mosfet Transistor, P Channel, 11 A, 200 V, 500 Mohm, -10 V, -4 V Rohs Compliant Vishay MOSFET
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel P-Channel
Package Type TO-220; TO-220-3 TO-220; TO-220-3 TO-220; SOT3; TO-220AB 1200 pF @ 25 V TO-220 TO-220 TO-3; TO-220 TO-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 200 volts 200 volts 200 volts -200 volts
IDSS 11000 milliamps 11000 milliamps
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