Vishay Intertechnology, Inc. P-Channel 6.5A 200V 0.8ohm MOSFET Transistor IRF9630STRRPBF

Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Product overview: IRF9630STRRPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 6.5A, 200V, 0.8ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 6.5A, 200V, 0.8ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF9630STRRPBF can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 986568-IRF9630STRRPBF
Length: 10.67 mm
Drain to Source Voltage (Vdss): -200 V
Height: 4.83 mm
Weight: 1.437803 g
Number of Channels: 1
Width: 9.02 mm
Rise Time: 27 ns
Fall Time: 24 ns
Categories: Transistors - FETs, MOSFETs - RF
Popularity: Low
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Element Configuration: Single
Max Power Dissipation: 3 W
Turn-On Delay Time: 12 ns
Continuous Drain Current (ID): 6.5 A
Turn-Off Delay Time: 28 ns
Drain to Source Resistance: 800 mΩ
Gate to Source Voltage (Vgs): 20 V