Vishay Precision Group Single FETs, MOSFETs IRF9630STRLPBF

Description
MOSFET P-CH 200V 6.5A D2PAK
Request a Quote Datasheet
Description
MOSFET P-CH 200V 6.5A D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF9630STRLPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF9630STRLPBF
Single FETs, MOSFETs IRF9630STRLPBF
MOSFET P-CH 200V 6.5A D2PAK

MOSFET P-CH 200V 6.5A D2PAK

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9630STRLPBF - 119104-IRF9630STRLPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9630STRLPBF
119104-IRF9630STRLPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9630STRLPBF 119104-IRF9630STRLPBF
Manufacturer: Vishay Win Source Part Number: 119104-IRF9630STRLPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3W (Ta), 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 6.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 800 mOhm @ 3.9A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 119104-IRF9630STRLPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 6.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 800 mOhm @ 3.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRF9630STRLPBFCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF9630STRLPBFCT-ND
Single FETs, MOSFETs IRF9630STRLPBFCT-ND
P-Channel 200V 6.5A (Tc) 3W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)

P-Channel 200V 6.5A (Tc) 3W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - IRF9630STRLPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF9630STRLPBFTR-ND
Single FETs, MOSFETs IRF9630STRLPBFTR-ND
P-Channel 200V 6.5A (Tc) 3W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)

P-Channel 200V 6.5A (Tc) 3W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - IRF9630STRLPBFDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF9630STRLPBFDKR-ND
Single FETs, MOSFETs IRF9630STRLPBFDKR-ND
P-Channel 200V 6.5A (Tc) 3W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)

P-Channel 200V 6.5A (Tc) 3W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF9630STRLPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF9630STRLPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF9630STRLPBF
MOSFET P-CH 200V 6.5A D2PAK

MOSFET P-CH 200V 6.5A D2PAK

Supplier's Site
Mosfet Transistor, P Channel, -6.5 A, -200 V, 0.8 Ohm, -10 V, -2 V Rohs Compliant Vishay - 04X6315 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, -6.5 A, -200 V, 0.8 Ohm, -10 V, -2 V Rohs Compliant Vishay
04X6315
Mosfet Transistor, P Channel, -6.5 A, -200 V, 0.8 Ohm, -10 V, -2 V Rohs Compliant Vishay 04X6315
MOSFET Transistor, P Channel, -6.5 A, -200 V, 0.8 ohm, -10 V, -2 V RoHS Compliant: Yes

MOSFET Transistor, P Channel, -6.5 A, -200 V, 0.8 ohm, -10 V, -2 V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, P Channel, -200V, 0.8Ohm, -6.5A, To-263-3; Channel Type Vishay - 85W3160 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -200V, 0.8Ohm, -6.5A, To-263-3; Channel Type Vishay
85W3160
Mosfet, P Channel, -200V, 0.8Ohm, -6.5A, To-263-3; Channel Type Vishay 85W3160
MOSFET, P CHANNEL, -200V, 0.8OHM, -6.5A, TO-263-3; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:6.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:74W RoHS Compliant: Yes

MOSFET, P CHANNEL, -200V, 0.8OHM, -6.5A, TO-263-3; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:6.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:74W RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET P-CH -200V HEXFET MOSFET

MOSFET P-CH -200V HEXFET MOSFET

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRF9630STRLPBF 119104-IRF9630STRLPBF IRF9630STRLPBFCT-ND IRF9630STRLPBF 04X6315 85W3160 IRF9630STRLPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9630STRLPBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, P Channel, -6.5 A, -200 V, 0.8 Ohm, -10 V, -2 V Rohs Compliant Vishay Mosfet, P Channel, -200V, 0.8Ohm, -6.5A, To-263-3; Channel Type Vishay MOSFET
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 200 volts 200 volts
IDSS 6500 milliamps 6500 milliamps
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