Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9610PBF IRF9610PBF

Description
Manufacturer: Vishay Win Source Part Number: 133201-IRF9610PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 20W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 1.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 170pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 900mA, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9610PBF - 133201-IRF9610PBF - Win Source Electronics
    Win Source Electronics
  • MOSFETs - 5429462 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1780837 - RS Components, Ltd.
    RS Components, Ltd.
  • Single FETs, MOSFETs - IRF9610PBF-ND - DigiKey
    DigiKey
  • P Channel Mosfet, -200V, 1.8A, To-220; Channel Type Vishay - 63J7433 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF9610PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 133201-IRF9610PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 20W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 1.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 170pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 900mA, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9610PBF - 133201-IRF9610PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9610PBF
133201-IRF9610PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9610PBF 133201-IRF9610PBF
Manufacturer: Vishay Win Source Part Number: 133201-IRF9610PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 20W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 1.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 170pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 900mA, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 133201-IRF9610PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 20W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 1.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 170pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 900mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
MOSFETs - 5429462 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
5429462
MOSFETs 5429462
MOSFET P-Channel 200V 1.8A TO220AB

MOSFET P-Channel 200V 1.8A TO220AB

Supplier's Site
MOSFETs - 1780837 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1780837
MOSFETs 1780837
MOSFET P-Channel 200V 1.8A TO220AB

MOSFET P-Channel 200V 1.8A TO220AB

Supplier's Site
Single FETs, MOSFETs - IRF9610PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF9610PBF-ND
Single FETs, MOSFETs IRF9610PBF-ND
P-Channel 200V 1.8A (Tc) 20W (Tc) Through Hole TO-220AB

P-Channel 200V 1.8A (Tc) 20W (Tc) Through Hole TO-220AB

Buy Now Datasheet
P Channel Mosfet, -200V, 1.8A, To-220; Channel Type Vishay - 63J7433 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -200V, 1.8A, To-220; Channel Type Vishay
63J7433
P Channel Mosfet, -200V, 1.8A, To-220; Channel Type Vishay 63J7433
P CHANNEL MOSFET, -200V, 1.8A, TO-220; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:1.8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

P CHANNEL MOSFET, -200V, 1.8A, TO-220; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:1.8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRF9610PBF
MOSFET IRF9610PBF
MOSFET P-CH -200V HEXFET MOSFET

MOSFET P-CH -200V HEXFET MOSFET

Buy Now Datasheet
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IRF9610PBF
Triode/MOS Tube/Transistor >> MOSFETs IRF9610PBF
200V 1.8A 20W 3Ω@10V,900mA 4V@250uA P Channel TO-220 MOSFETs ROHS

200V 1.8A 20W 3Ω@10V,900mA 4V@250uA P Channel TO-220 MOSFETs ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF9610PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF9610PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF9610PBF
MOSFET P-CH 200V 1.8A TO220AB

MOSFET P-CH 200V 1.8A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics RS Components, Ltd. RS Components, Ltd. DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 133201-IRF9610PBF 5429462 1780837 IRF9610PBF-ND 63J7433 IRF9610PBF IRF9610PBF IRF9610PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9610PBF MOSFETs MOSFETs Single FETs, MOSFETs P Channel Mosfet, -200V, 1.8A, To-220; Channel Type Vishay MOSFET Triode/MOS Tube/Transistor >> MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel
V(BR)DSS 200 volts 200 volts
PD 20000 milliwatts 20000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3; TO-220AB TO-220; To-220ab TO-220; TO-220 TO-220; TO-220-3 TO-3; TO-220 TO-220 TO-220; TO-220-3
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