MOSFET P-CH 100V 19A D2PAK
TRANSISTOR POLARITY:P CHANNEL, CONTINUOUS DRAIN CURRENT ID:-19A, DRAIN SOURCE VOLTAGE VDS:-100V, ON RESISTANCE RDS(ON):0.2OHM, RDS(ON) TEST VOLTAGE VGS:-10V, THRESHOLD VOLTAGE VGS:-4V, POWER DISSIPATION PD:150W, NO. OF PINS:3PINS ROHS COMPLIANT: NO. FREE 2 YEAR RADWELL WARRANTY
P-Channel 100V 19A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: Vishay
Win Source Part Number: 205329-IRF9540SPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 19A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 61nC @ 10V
Max Input Capacitance: 1400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 200 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
MOSFET P-CH 100V 19A D2PAK
MOSFET, P-CH, -100V, -19A, TO-263AB; Transistor Polarity:P Channel; Continuous Drain Current Id:-19A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power RoHS Compliant: Yes
MOSFET P-CH -100V HEXFET MOSFET
| ODG (Origin Data Global) | RS Components, Ltd. | Radwell International | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF9540SPBF | 6504205 | 16352445 | IRF9540SPBF-ND | 205329-IRF9540SPBF | IRF9540SPBF | 01AC4891 | IRF9540SPBF |
| Product Name | Single FETs, MOSFETs | MOSFETs | Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9540SPBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -100V, -19A, To-263Ab; Transistor Polarity Vishay | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | |||||
| IDSS | 19000 milliamps | 19000 milliamps | -19000 milliamps | |||||
| PD | 3700 milliwatts | 3700 to 150000 milliwatts |
