P-Channel 100V 12A (Tc) 88W (Tc) Through Hole TO-220AB
P-Channel MOSFET, 100V, 12A, 300mR, TO-220AB Product overview: IRF9530PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 100V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF9530PBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 017559-IRF9530PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 88W (Tc)
Family Name: IRF9530
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 860pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 300 mOhm @ 7.2A, 10V
Alternative Parts (Cross-Reference): IRF9530LPBF; SFP9530_NL; MTP12P10;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
MOSFET P-CH 100V 12A TO220AB
100V 12A 88W 300mΩ@7.2A,10V 4V@250uA P Channel TO-220AB-3 MOSFETs ROHS
P CHANNEL MOSFET, -100V, 12A, TO-220AB; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.3Ohm;ID -12A;TO-220AB;PD 88W;VGS +/-20V
MOSFET P-CH 100V 12A TO-220AB
POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 100V, 0.3OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
| DigiKey | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Allied Electronics, Inc. | Utmel Electronic Limited | Radwell International | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF9530PBF-ND | 7085159 | 278-IRF9530PBF | 017559-IRF9530PBF | IRF9530PBF | IRF9530PBF | 63J7430 | 70078872 | 880-IRF9530PBF | 16352417 | IRF9530PBF |
| Product Name | Single FETs, MOSFETs | MOSFETs | P-Channel 100V 12A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9530PBF | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | P Channel Mosfet, -100V, 12A, To-220Ab; Channel Type Vishay | MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.3Ohm;ID -12A;TO-220AB;PD 88W;VGS +/-20V | MOSFET P-CH 100V 12A TO-220AB | Transistor | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; To-220ab | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220 | TO-3; TO-220 | TO-220 | ||||
| MOSFET Operating Mode | Enhancement | ||||||||||
| Number of units in IC | 1 | 1 | |||||||||
| PD | 88000 milliwatts | 88000 milliwatts | 88000 milliwatts | 88000 milliwatts | 88000 milliwatts | 88000 milliwatts |
