Vishay Intertechnology, Inc. Single FETs, MOSFETs IRF9520

Description
P-Channel 100V 6.8A (Tc) 60W (Tc) Through Hole TO-220AB
Request a Quote Datasheet
Description
P-Channel 100V 6.8A (Tc) 60W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF9520-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF9520-ND
Single FETs, MOSFETs IRF9520-ND
P-Channel 100V 6.8A (Tc) 60W (Tc) Through Hole TO-220AB

P-Channel 100V 6.8A (Tc) 60W (Tc) Through Hole TO-220AB

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9520 - 040704-IRF9520 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9520
040704-IRF9520
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9520 040704-IRF9520
Manufacturer: Vishay Win Source Part Number: 040704-IRF9520 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 6.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 390pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 600 mOhm @ 4.1A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 040704-IRF9520
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 6.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 390pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 600 mOhm @ 4.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Integrated Circuits (ICs) - Transistors - MOSFETs - IRF9520 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Transistors - MOSFETs
IRF9520
Integrated Circuits (ICs) - Transistors - MOSFETs IRF9520
Integrated Circuits (ICs) - Transistors - MOSFETs

Integrated Circuits (ICs) - Transistors - MOSFETs

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRF9520-ND 040704-IRF9520 IRF9520
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9520 Integrated Circuits (ICs) - Transistors - MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB
V(BR)DSS 100 volts
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - AUIRFR4105TRL-ND - DigiKey
Specs
Polarity N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63
Transistor Grade / Operating Range Automotive
View Details
3 suppliers
Single FETs, MOSFETs - UJ3C120080K3S - ODG (Origin Data Global)
Specs
Polarity N-Channel; N-Channel
Transistor Technology / Material SiCFET (Cascode SiCJFET)
V(BR)DSS 1200 volts
View Details
4 suppliers