The N Channel MOSFET, part number 63J7420, from Vishay features a maximum drain-source voltage (Vds) of 500V and a continuous drain current (Id) rating of 8A. It is housed in a D2-PAK (TO-263) surface mount package, which is designed for high power capability and low on-resistance, rated at 0.85Oc at a gate-source voltage (Vgs) of 10V. The device supports fast switching and is suitable for high current applications, with a maximum power dissipation of 125W at a case temperature of 25¬8C. It is compliant with RoHS and halogen-free standards, making it suitable for environmentally conscious designs. The MOSFET also features a dynamic dV/dt rating and is rated for repetitive avalanche, enhancing its reliability in various applications.
N-Channel 500V 8A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 500V 8A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 500V 8A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: Vishay
Win Source Part Number: 017548-IRF840STRLPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Family Name: IRF840S
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 850 mOhm @ 4.8A, 10V
Alternative Parts (Cross-Reference): FMC07N50E; 2SK3325-Z; 2SK2776(SM); UF840L-TQ2-R;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
MOSFET N-CH 500V 8A D2PAK
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MOSFET N-CH 500V 8A D2PAK
N CHANNEL MOSFET, 500V, 8A, D2-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF840STRLPBFDKR-ND | 017548-IRF840STRLPBF | IRF840STRLPBF | IRF840STRLPBF | IRF840STRLPBF | 63J7420 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF840STRLPBF | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 500V, 8A, D2-Pak, Full Reel; Channel Type Vishay |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3 | |
| V(BR)DSS | 500 volts | 500 volts | ||||
| PD | 3100 to 125000 milliwatts | 3100 milliwatts |
