N-Channel MOSFET, 500V, 8A, 850mR, TO-220AB Product overview: IRF840PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF840PBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 093142-IRF840PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Family Name: IRF840
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 850 mOhm @ 4.8A, 10V
Alternative Parts (Cross-Reference): IRF840; FDP8N50NZ; BUZ40B; STP10NM50N;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China, Germany, Israel, Mexico, Taiwan
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 500V 8A TO220AB
N-Channel 500V 8A (Tc) 125W (Tc) Through Hole TO-220AB
N CHANNEL MOSFET, 500V, 8A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET, N, 500V, 8A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.85ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
MOSFET, N, 500V, 8A, TO-220; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:8A; DRAIN SOURCE VOLTAGE VDS:500V; ON RESISTANCE RDS(ON):0.85OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V; POWER DISSIPATION ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.85Ohm;ID 8A;TO-220AB;PD 125W;VGS +/-20V
500V 8A 850mΩ@4.8A,10V 125W 4V@250uA null TO-220AB-3 MOSFETs ROHS
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | Radwell International | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRF840PBF | 2816028 | 093142-IRF840PBF | IRF840PBF | IRF840PBF-ND | 63J7418 | 38K2862 | 16352365 | IRF840PBF | 70078869 | IRF840PBF |
| Product Name | N-Channel 500V 8A MOSFET Transistor | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF840PBF | Single FETs, MOSFETs | Single FETs, MOSFETs | N Channel Mosfet, 500V, 8A, To-220; Channel Type Vishay | Mosfet, N, 500V, 8A, To-220; Transistor Polarity Vishay | Transistor | MOSFET | MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.85Ohm;ID 8A;TO-220AB;PD 125W;VGS +/-20V | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||||
| PD | 125000 milliwatts | 125000 milliwatts | 125000 milliwatts | 125000 milliwatts | 125000 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||||
| Package Type | TO-220; TO-220AB | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3; TO-220 | TO-3; TO-220 | TO-220 | TO-220 | |||
| V(BR)DSS | 500 volts | 500 volts | 500 volts | 500 volts |
