N-Channel MOSFET, 500V, 8A, 850mR Rds On, D2PAK Product overview: IRF840ASPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF840ASPBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 205321-IRF840ASPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1018pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 850 mOhm @ 4.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
N-Channel 500V 8A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 500V 8A D2PAK
MOSFET N-CH 500V HEXFET MOSFET D2-PA
500V 8A 850mΩ@4.8A,10V 4V@250uA null D2PAK MOSFETs ROHS
MOSFET, N-CH, 500V, 8A, 150DEG C, 125W; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRF840ASPBF | 205321-IRF840ASPBF | IRF840ASPBF-ND | 7085146 | 7085146P | IRF840ASPBF | IRF840ASPBF | IRF840ASPBF | 38K2860 |
| Product Name | N-Channel 500V 8A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF840ASPBF | Single FETs, MOSFETs | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, N-Ch, 500V, 8A, 150Deg C, 125W; Channel Type Vishay |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||||
| PD | 3100 milliwatts | 3100 to 125000 milliwatts | 3100 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| V(BR)DSS | 500 volts | 500 volts | |||||||
| Package Type | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; D2pak (to-263) | TO-263; TO-263 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3 |
