Vishay Precision Group Single FETs, MOSFETs IRF830PBF

Description
N-Channel 500V 4.5A (Tc) 74W (Tc) Through Hole TO-220AB
Request a Quote Datasheet
Description
N-Channel 500V 4.5A (Tc) 74W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF830PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF830PBF-ND
Single FETs, MOSFETs IRF830PBF-ND
N-Channel 500V 4.5A (Tc) 74W (Tc) Through Hole TO-220AB

N-Channel 500V 4.5A (Tc) 74W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Transistor - 16352309 - Radwell International
Willingboro, NJ, United States
Transistor
16352309
Transistor 16352309
MOSFET, TRANSISTOR, 500V, 4.5A, TO-220, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

MOSFET, TRANSISTOR, 500V, 4.5A, TO-220, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF830PBF - 017541-IRF830PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF830PBF
017541-IRF830PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF830PBF 017541-IRF830PBF
Manufacturer: Vishay Win Source Part Number: 017541-IRF830PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 4.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 610pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.7A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 017541-IRF830PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 4.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 610pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.7A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-CH 500V HEXFET MOSFET

MOSFET N-CH 500V HEXFET MOSFET

Buy Now Datasheet
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.5 Ohms;ID 4.5A;TO-220AB;PD 74W;VGS +/-20V - 70078865 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.5 Ohms;ID 4.5A;TO-220AB;PD 74W;VGS +/-20V
70078865
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.5 Ohms;ID 4.5A;TO-220AB;PD 74W;VGS +/-20V 70078865
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.5 Ohms;ID 4.5A;TO-220AB;PD 74W;VGS +/-20V

MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.5 Ohms;ID 4.5A;TO-220AB;PD 74W;VGS +/-20V

Supplier's Site
N Channel Mosfet, 500V, 4.5A To-220; Channel Type Vishay - 63J7409 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 500V, 4.5A To-220; Channel Type Vishay
63J7409
N Channel Mosfet, 500V, 4.5A To-220; Channel Type Vishay 63J7409
N CHANNEL MOSFET, 500V, 4.5A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:4.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 500V, 4.5A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:4.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N, 500V, 4.5A, To-220; Transistor Polarity Vishay - 38K2858 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, 500V, 4.5A, To-220; Transistor Polarity Vishay
38K2858
Mosfet, N, 500V, 4.5A, To-220; Transistor Polarity Vishay 38K2858
MOSFET, N, 500V, 4.5A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes

MOSFET, N, 500V, 4.5A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Radwell International Win Source Electronics VAST STOCK CO., LIMITED Allied Electronics, Inc. Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRF830PBF-ND 16352309 017541-IRF830PBF IRF830PBF 70078865 63J7409 38K2858
Product Name Single FETs, MOSFETs Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF830PBF MOSFET MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.5 Ohms;ID 4.5A;TO-220AB;PD 74W;VGS +/-20V N Channel Mosfet, 500V, 4.5A To-220; Channel Type Vishay Mosfet, N, 500V, 4.5A, To-220; Transistor Polarity Vishay
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220 TO-3; TO-220 TO-3; TO-220
V(BR)DSS 500 volts 500 volts
PD 74000 milliwatts 74000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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