N-Channel 500V 4.5A (Tc) 74W (Tc) Through Hole TO-220AB
Manufacturer: Vishay
Win Source Part Number: 017541-IRF830PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 4.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 610pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.7A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient
N-Channel MOSFET, 500V, 4.5A, 1.5R, TO-220AB Product overview: IRF830PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 4.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF830PBF can be used for catalog matching and distributor lookup.
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.5 Ohms;ID 4.5A;TO-220AB;PD 74W;VGS +/-20V
N CHANNEL MOSFET, 500V, 4.5A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:4.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET, N, 500V, 4.5A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
MOSFET, TRANSISTOR, 500V, 4.5A, TO-220, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | Newark, An Avnet Company | Newark, An Avnet Company | Radwell International | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRF830PBF-ND | 017541-IRF830PBF | 278-IRF830PBF | IRF830PBF | 70078865 | 63J7409 | 38K2858 | 16352309 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF830PBF | N-Channel 500V 4.5A MOSFET Transistor | MOSFET | MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.5 Ohms;ID 4.5A;TO-220AB;PD 74W;VGS +/-20V | N Channel Mosfet, 500V, 4.5A To-220; Channel Type Vishay | Mosfet, N, 500V, 4.5A, To-220; Transistor Polarity Vishay | Transistor |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-220 | TO-3; TO-220 | TO-3; TO-220 | |||
| V(BR)DSS | 500 volts | 500 volts | ||||||
| PD | 74000 milliwatts | 74000 milliwatts | 74000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
