Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF830BPBF IRF830BPBF

Description
Manufacturer: Vishay Win Source Part Number: 60118-IRF830BPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 104W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5.3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 325pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF830BPBF - 60118-IRF830BPBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRF830BPBF-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF830BPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 500V, 5.3A, To-220Ab; Channel Type Vishay - 99W8855 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 60118-IRF830BPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 104W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5.3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 325pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF830BPBF - 60118-IRF830BPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF830BPBF
60118-IRF830BPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF830BPBF 60118-IRF830BPBF
Manufacturer: Vishay Win Source Part Number: 60118-IRF830BPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 104W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5.3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 325pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 60118-IRF830BPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 5.3A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 325pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRF830BPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF830BPBF-ND
Single FETs, MOSFETs IRF830BPBF-ND
N-Channel 500V 5.3A (Tc) 104W (Tc) Through Hole TO-220AB

N-Channel 500V 5.3A (Tc) 104W (Tc) Through Hole TO-220AB

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
MOSFET Transistor
278-IRF830BPBF
MOSFET Transistor 278-IRF830BPBF
TRANSISTOR POWER, FET, FET General Purpose Power Product overview: IRF830BPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF830BPBF can be used for catalog matching and distributor lookup.

TRANSISTOR POWER, FET, FET General Purpose Power Product overview: IRF830BPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF830BPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRF830BPBF
MOSFET IRF830BPBF
MOSFET 500V 1.5ohm@10V 5.3A N-Ch D-SRS

MOSFET 500V 1.5ohm@10V 5.3A N-Ch D-SRS

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF830BPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF830BPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF830BPBF
MOSFET N-CH 500V 5.3A TO220AB

MOSFET N-CH 500V 5.3A TO220AB

Supplier's Site
Mosfet, N-Ch, 500V, 5.3A, To-220Ab; Channel Type Vishay - 99W8855 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 500V, 5.3A, To-220Ab; Channel Type Vishay
99W8855
Mosfet, N-Ch, 500V, 5.3A, To-220Ab; Channel Type Vishay 99W8855
MOSFET, N-CH, 500V, 5.3A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5.3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes

MOSFET, N-CH, 500V, 5.3A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5.3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 60118-IRF830BPBF IRF830BPBF-ND 278-IRF830BPBF IRF830BPBF IRF830BPBF 99W8855
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF830BPBF Single FETs, MOSFETs MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 500V, 5.3A, To-220Ab; Channel Type Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 500 volts
PD 104000 milliwatts 104000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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