The IRF830A series is an N-channel MOSFET designed for high-speed switching applications such as switch mode and uninterruptable power supplies. It is packaged in a TO-220AB case with dimensions of 14.33 to 15.85 mm in length, 9.96 to 10.52 mm in width, and 4.24 to 4.65 mm in height. The device has a drain-source voltage rating of 500 V, a continuous drain current of 5.0 A at 25 °C, and a maximum on-state resistance of 1.4 Ω at 10 V gate-source voltage. It supports a single pulse avalanche energy of 230 mJ and a maximum power dissipation of 74 W. The part is RoHS compliant and meets the RoHS Directive 2002/95/EC. Thermal resistance from junction to case is 1.7 °C/W, and the operating temperature range is from -55 °C to +150 °C.
N CHANNEL MOSFET, 500V, 5A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V; MSL:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 27AC6908 |
| Product Name | N Channel Mosfet, 500V, 5A, To-220; Channel Type Vishay |
| Polarity | N-Channel |