MOSFET N-CH 500V 5A TO220AB
Manufacturer: Vishay
Win Source Part Number: 069410-IRF830APBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 74W (Tc)
Family Name: IRF830A
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 5A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 620pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.4 Ohm @ 3A, 10V
Alternative Parts (Cross-Reference): SiHF830A-E3; SiHF830A; RJK5030DPP-M0#T2; TK4A53D(Q);
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient
N-Channel 500V 5A (Tc) 74W (Tc) Through Hole TO-220AB
MOSFET RECOMMENDED ALT 844-IRF830A
N CHANNEL MOSFET, 500V, 5A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V; MSL:- RoHS Compliant: Yes
POWER FIELD-EFFECT TRANSISTOR, 5A I(D), 500V, 1.4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.4 Ohms;ID 5A;TO-220AB;PD 74W;VGS +/-30V
MOSFET N-CH 500V 5A TO220AB
| RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Radwell International | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 5429434 | 1780834 | IRF830APBF | 069410-IRF830APBF | IRF830APBF-ND | IRF830APBF | 63J7407 | 16352297 | 70078864 | IRF830APBF |
| Product Name | MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF830APBF | Single FETs, MOSFETs | MOSFET | N Channel Mosfet, 500V, 5A, To-220; Channel Type Vishay | Transistor | MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.4 Ohms;ID 5A;TO-220AB;PD 74W;VGS +/-30V | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||||||
| Package Type | TO-220; To-220ab | TO-220; TO-220 | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-3; TO-220 | TO-220 | TO-220; TO-220-3 | ||
| Number of units in IC | 1 | |||||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
