N channel ;VBRDSS 500 V; RDSon 1400 mO
N channel ;VBRDSS 500 V; RDSon 1400 mO
N-Channel 500V 5A (Tc) 3.1W (Ta), 74W (Tc) Through Hole I2PAK
Manufacturer: Vishay
Win Source Part Number: 069409-IRF830ALPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 5A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 620pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.4 Ohm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
MOSFET N-CH 500V 5A I2PAK
| RS Components, Ltd. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1808670 | IRF830ALPBF-ND | 069409-IRF830ALPBF | IRF830ALPBF | IRF830ALPBF |
| Product Name | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF830ALPBF | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-262-3 Long Leads, I2PAK, TO-262AA | SOT3; I2PAK | TO-262-3 Long Leads, I2PAK, TO-262AA | ||
| V(BR)DSS | 500 volts |
