Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF830 IRF830

Description
Manufacturer: Vishay Win Source Part Number: 1046755-IRF830 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 4.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 610pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.7A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF830 - 1046755-IRF830 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRF830IR-ND - DigiKey
    DigiKey
  • MOSFET N-CH 500V 4.5A TO-220AB - 880-IRF830 - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 1046755-IRF830 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 4.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 610pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.7A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF830 - 1046755-IRF830 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF830
1046755-IRF830
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF830 1046755-IRF830
Manufacturer: Vishay Win Source Part Number: 1046755-IRF830 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 4.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 610pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.7A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1046755-IRF830
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 4.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 610pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRF830IR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF830IR-ND
Single FETs, MOSFETs IRF830IR-ND
N-Channel 500V 4.5A (Tc) 74W (Tc) Through Hole TO-220AB

N-Channel 500V 4.5A (Tc) 74W (Tc) Through Hole TO-220AB

Buy Now Datasheet
MOSFET N-CH 500V 4.5A TO-220AB - 880-IRF830 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 500V 4.5A TO-220AB
880-IRF830
MOSFET N-CH 500V 4.5A TO-220AB 880-IRF830
MOSFET N-CH 500V 4.5A TO-220AB

MOSFET N-CH 500V 4.5A TO-220AB

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1046755-IRF830 IRF830IR-ND 880-IRF830
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF830 Single FETs, MOSFETs MOSFET N-CH 500V 4.5A TO-220AB
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 500 volts 500 volts
PD 74000 milliwatts 74000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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