The IRF820STRR is a surface mount N-channel MOSFET in the D2PAK (TO-263) package, designed for high-current power switching applications. It has a drain-source voltage rating of 500 V, a continuous drain current of 2.5 A at 25 °C, and a maximum on-resistance of 3.0 Ω at 10 V gate-source voltage. The device features a repetitive avalanche energy rating of 5.0 mJ and a typical drain-source on-state resistance of 3.0 Ω. It supports fast switching and is rated for a junction and storage temperature range of -55 °C to +150 °C. The total gate charge is 24 nC, with gate-source and gate-drain charges of 3.3 nC and 13 nC, respectively. The package is a surface mount style suitable for high power density applications.
500V 2.5A N-Channel MOSFET, 3R Rds On, D2PAK Product overview: IRF820STRR from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 2.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 2.5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRF820STRR can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 285-IRF820STRR |
| Product Name | N-Channel 500V 2.5A MOSFET Transistor |
| Polarity | N-Channel |
