Manufacturer: Vishay
Win Source Part Number: 017538-IRF820PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 2.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 360pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 1.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
MOSFET N-Channel 500V 2.5A TO220AB
MOSFET N-Channel 500V 2.5A TO220AB
N-Channel 500V 2.5A (Tc) 50W (Tc) Through Hole TO-220AB
MOSFET N-CH 500V 2.5A TO220AB
N CHANNEL MOSFET, 500V, 2.5A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET Transistor, N Channel, 2.5 A, 500 V, 3 ohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET N-CHANNEL 500V
N CHANNEL MOSFET, 500V, 2.5A TO-220; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:2.5A; DRAIN SOURCE VOLTAGE VDS:500V; ON RESISTANCE RDS(ON):3OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V; PRODUCT RANGE:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 500V 2.5A TO220AB
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 3 Ohms;ID 2.5A;TO-220AB;PD 50W;VGS +/-20V
| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Radwell International | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 017538-IRF820PBF | 5430002 | 1780851 | IRF820PBF-ND | IRF820PBF | 63J7404 | 38K2855 | 16352277 | IRF820PBF | 70078862 | IRF820PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF820PBF | MOSFETs | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | N Channel Mosfet, 500V, 2.5A To-220; Channel Type Vishay | Mosfet Transistor, N Channel, 2.5 A, 500 V, 3 Ohm, 10 V, 4 V Rohs Compliant Vishay | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 3 Ohms;ID 2.5A;TO-220AB;PD 50W;VGS +/-20V | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 500 volts | 500 volts | 500 volts | ||||||||
| PD | 50000 milliwatts | 50000 milliwatts | 50000 milliwatts | ||||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; To-220ab | TO-220; TO-220 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3; TO-220 | TO-3 | TO-220; TO-220-3 | TO-220 |
