Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IRF820ASPBF

Description
Win Source Part Number: 1119228-IRF820ASPBF Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 50 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 50W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK (TO-263) Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 80 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: *IRF820ASPBF Base Product Number: IRF820 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1119228-IRF820ASPBF Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 50 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 50W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK (TO-263) Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 80 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: *IRF820ASPBF Base Product Number: IRF820 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1119228-IRF820ASPBF - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1119228-IRF820ASPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1119228-IRF820ASPBF
Win Source Part Number: 1119228-IRF820ASPBF Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 50 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 50W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK (TO-263) Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 80 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: *IRF820ASPBF Base Product Number: IRF820 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1119228-IRF820ASPBF
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 50
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: *IRF820ASPBF
Base Product Number: IRF820
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - IRF820ASPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF820ASPBF-ND
Single FETs, MOSFETs IRF820ASPBF-ND
N-Channel 500V 2.5A (Tc) 50W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 500V 2.5A (Tc) 50W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF820ASPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF820ASPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF820ASPBF
MOSFET N-CH 500V 2.5A D2PAK

MOSFET N-CH 500V 2.5A D2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Chan 500V 2.5 Amp

MOSFET N-Chan 500V 2.5 Amp

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1119228-IRF820ASPBF IRF820ASPBF-ND IRF820ASPBF IRF820ASPBF
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
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