Vishay Intertechnology, Inc. Single FETs, MOSFETs IRF7822TRL

Description
N-Channel 30V 18A (Ta) 3.1W (Ta) Surface Mount 8-SOIC
  • Single FETs, MOSFETs - IRF7822TRL-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7822TRL - 001955-IRF7822TRL - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7822TRL - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
N-Channel 30V 18A (Ta) 3.1W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IRF7822TRL-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF7822TRL-ND
Single FETs, MOSFETs IRF7822TRL-ND
N-Channel 30V 18A (Ta) 3.1W (Ta) Surface Mount 8-SOIC

N-Channel 30V 18A (Ta) 3.1W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7822TRL - 001955-IRF7822TRL - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7822TRL
001955-IRF7822TRL
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7822TRL 001955-IRF7822TRL
Manufacturer: Vishay Win Source Part Number: 001955-IRF7822TRL Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 18A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 60nC @ 5V Max Input Capacitance: 5500pF @ 16V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 15A, 4.5V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 001955-IRF7822TRL
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 18A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 60nC @ 5V
Max Input Capacitance: 5500pF @ 16V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 15A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7822TRL - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF7822TRL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF7822TRL
MOSFET N-CH 30V 18A 8SO

MOSFET N-CH 30V 18A 8SO

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRF7822TRL-ND 001955-IRF7822TRL IRF7822TRL
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7822TRL Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO 8-SOIC (0.154, 3.90mm Width)
V(BR)DSS 30 volts
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