Vishay Intertechnology, Inc. Single FETs, MOSFETs IRF744PBF

Description
N-Channel 450V 8.8A (Tc) 125W (Tc) Through Hole TO-220AB
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Description
N-Channel 450V 8.8A (Tc) 125W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - IRF744PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF744PBF-ND
Single FETs, MOSFETs IRF744PBF-ND
N-Channel 450V 8.8A (Tc) 125W (Tc) Through Hole TO-220AB

N-Channel 450V 8.8A (Tc) 125W (Tc) Through Hole TO-220AB

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF744PBF - 1046645-IRF744PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF744PBF
1046645-IRF744PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF744PBF 1046645-IRF744PBF
Manufacturer: Vishay Win Source Part Number: 1046645-IRF744PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 450V Continuous Drain Current at 25°C: 8.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 80nC @ 10V Max Input Capacitance: 1400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 630 mOhm @ 5.3A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1046645-IRF744PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 450V
Continuous Drain Current at 25°C: 8.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 1400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 630 mOhm @ 5.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF744PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF744PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF744PBF
MOSFET N-CH 450V 8.8A TO220AB

MOSFET N-CH 450V 8.8A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRF744PBF-ND 1046645-IRF744PBF IRF744PBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF744PBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3
V(BR)DSS 450 volts
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