MOSFET N-CH 400V 10A D2PAK
Manufacturer: Vishay
Win Source Part Number: 017527-IRF740STRLPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 1400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 550 mOhm @ 6A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
N-Channel 400V 10A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 400V 10A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 400V 10A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D²PAK (TO-263)
MOSFET, N CH, 400V, 10A, TO-263-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:10A; On Resistance Rds(on):0.55ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
N CHANNEL MOSFET, 400V, 10A SMD-220, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:10A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4VRoHS Compliant: Yes
MOSFET, N-CH, 400V, 10A, TO-263 ROHS COMPLIANT: YES
MOSFET N-CH 400V 10A D2PAK
MOSFET N-CH 400V 10A D2PAK
MOSFET N-CH 400V HEXFET MOSFET D2-PA
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF740STRLPBF | 017527-IRF740STRLPBF | IRF740STRLPBFCT-ND | 05W6871 | 63J7393 | 56AJ9918 | 880-IRF740STRLPBF | IRF740STRLPBF | IRF740STRLPBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF740STRLPBF | Single FETs, MOSFETs | Mosfet, N Ch, 400V, 10A, To-263-3; Transistor Polarity Vishay | N Channel Mosfet, 400V, 10A Smd-220, Full Reel; Channel Type Vishay | Mosfet, N-Ch, 400V, 10A, To-263 Rohs Compliant Vishay | MOSFET N-CH 400V 10A D2PAK | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 400 volts | 400 volts | 400 volts | ||||||
| IDSS | 10000 milliamps | 10000 milliamps | 10000 milliamps | ||||||
| PD | 3100 milliwatts | 3100 to 125000 milliwatts | 3100 milliwatts |
