Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF740BPBF IRF740BPBF

Description
Manufacturer: Vishay Win Source Part Number: 111880-IRF740BPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 147W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 526pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 600 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF740BPBF - 111880-IRF740BPBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRF740BPBF-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF740BPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 400V, 10A, 150Deg C, 147W; Channel Type Vishay - 01AC4889 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 111880-IRF740BPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 147W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 526pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 600 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF740BPBF - 111880-IRF740BPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF740BPBF
111880-IRF740BPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF740BPBF 111880-IRF740BPBF
Manufacturer: Vishay Win Source Part Number: 111880-IRF740BPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 147W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 526pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 600 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 111880-IRF740BPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 147W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 526pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 600 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRF740BPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF740BPBF-ND
Single FETs, MOSFETs IRF740BPBF-ND
N-Channel 400V 10A (Tc) 147W (Tc) Through Hole TO-220AB

N-Channel 400V 10A (Tc) 147W (Tc) Through Hole TO-220AB

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRF740BPBF
MOSFET IRF740BPBF
MOSFET 400V 600mOhm@10V 10A N-Ch D-SRS

MOSFET 400V 600mOhm@10V 10A N-Ch D-SRS

Buy Now Datasheet
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IRF740BPBF
Triode/MOS Tube/Transistor >> MOSFETs IRF740BPBF
400V 10A 600mΩ@5A,10V 147W 5V@250uA null TO-220AB-3 MOSFETs ROHS

400V 10A 600mΩ@5A,10V 147W 5V@250uA null TO-220AB-3 MOSFETs ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF740BPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF740BPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF740BPBF
MOSFET N-CH 400V 10A TO220AB

MOSFET N-CH 400V 10A TO220AB

Supplier's Site
Mosfet, N-Ch, 400V, 10A, 150Deg C, 147W; Channel Type Vishay - 01AC4889 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 400V, 10A, 150Deg C, 147W; Channel Type Vishay
01AC4889
Mosfet, N-Ch, 400V, 10A, 150Deg C, 147W; Channel Type Vishay 01AC4889
MOSFET, N-CH, 400V, 10A, 150DEG C, 147W; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

MOSFET, N-CH, 400V, 10A, 150DEG C, 147W; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 111880-IRF740BPBF IRF740BPBF-ND IRF740BPBF IRF740BPBF IRF740BPBF 01AC4889
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF740BPBF Single FETs, MOSFETs MOSFET Triode/MOS Tube/Transistor >> MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 400V, 10A, 150Deg C, 147W; Channel Type Vishay
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 400 volts 400 volts
PD 147000 milliwatts 147000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-220 TO-220; TO-220-3 TO-3
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