Manufacturer: Vishay
Win Source Part Number: 205315-IRF740ASPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 36nC @ 10V
Max Input Capacitance: 1030pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 550 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
N-Channel 400V 10A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D²PAK (TO-263)
N-Channel MOSFET, 400V, 10A, 550mR, D2PAK Product overview: IRF740ASPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 400V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 400V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF740ASPBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 400V 10A D2PAK
MOSFET, N-CH, 400V, 10A, 150DEG C, 125W; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:10A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
400V 10A 550mΩ@6A,10V 4V@250uA null D2PAK MOSFETs ROHS
MOSFET N-CH 400V 10A D2PAK
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 205315-IRF740ASPBF | IRF740ASPBF-ND | 278-IRF740ASPBF | IRF740ASPBF | IRF740ASPBF | 38K2846 | IRF740ASPBF | IRF740ASPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF740ASPBF | Single FETs, MOSFETs | N-Channel 400V 10A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 400V, 10A, 150Deg C, 125W; Channel Type Vishay | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| V(BR)DSS | 400 volts | 400 volts | 400 volts | |||||
| PD | 3100 to 125000 milliwatts | 3100 milliwatts | 3100 milliwatts | 3100 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
