Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF730SPBF IRF730SPBF

Description
Manufacturer: Vishay Win Source Part Number: 069351-IRF730SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 5.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1 Ohm @ 3.3A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF730SPBF - 069351-IRF730SPBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRF730SPBF-ND - DigiKey
    DigiKey
  • N Channel Mosfet, 400V, 5.5A, Smd-220; Channel Type Vishay - 63J7381 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF730SPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 400V 5.5A D2PAK - 880-IRF730SPBF - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 069351-IRF730SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 5.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1 Ohm @ 3.3A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF730SPBF - 069351-IRF730SPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF730SPBF
069351-IRF730SPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF730SPBF 069351-IRF730SPBF
Manufacturer: Vishay Win Source Part Number: 069351-IRF730SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 5.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1 Ohm @ 3.3A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 069351-IRF730SPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 5.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1 Ohm @ 3.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRF730SPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF730SPBF-ND
Single FETs, MOSFETs IRF730SPBF-ND
N-Channel 400V 5.5A (Tc) 3.1W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 400V 5.5A (Tc) 3.1W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRF730SPBF
MOSFET IRF730SPBF
MOSFET N-Chan 400V 5.5 Amp

MOSFET N-Chan 400V 5.5 Amp

Buy Now Datasheet
N Channel Mosfet, 400V, 5.5A, Smd-220; Channel Type Vishay - 63J7381 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 400V, 5.5A, Smd-220; Channel Type Vishay
63J7381
N Channel Mosfet, 400V, 5.5A, Smd-220; Channel Type Vishay 63J7381
N CHANNEL MOSFET, 400V, 5.5A, SMD-220; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:5.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 400V, 5.5A, SMD-220; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:5.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF730SPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF730SPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF730SPBF
MOSFET N-CH 400V 5.5A D2PAK

MOSFET N-CH 400V 5.5A D2PAK

Supplier's Site
MOSFET N-CH 400V 5.5A D2PAK - 880-IRF730SPBF - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 400V 5.5A D2PAK
880-IRF730SPBF
MOSFET N-CH 400V 5.5A D2PAK 880-IRF730SPBF
MOSFET N-CH 400V 5.5A D2PAK

MOSFET N-CH 400V 5.5A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 069351-IRF730SPBF IRF730SPBF-ND IRF730SPBF 63J7381 IRF730SPBF 880-IRF730SPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF730SPBF Single FETs, MOSFETs MOSFET N Channel Mosfet, 400V, 5.5A, Smd-220; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 400V 5.5A D2PAK
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 400 volts 400 volts
PD 3100 to 74000 milliwatts 3100 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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