N-Channel 400V 5.5A (Tc) 74W (Tc) Through Hole TO-220AB
Manufacturer: Vishay
Win Source Part Number: 069350-IRF730PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 5.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1 Ohm @ 3.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
N-Channel MOSFET, 400V, 5.5A, 1R, TO-220AB Product overview: IRF730PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 400V, 5.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 400V, 5.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF730PBF can be used for catalog matching and distributor lookup.
N CHANNEL MOSFET, 400V, 5.5A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:5.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 1Ohm;ID 5.5A;TO-220AB;PD 74W;VGS +/-20V;-55
MOSFET N-CH 400V 5.5A TO220AB
400V 5.5A 1Ω@3.3A,10V 74W 4V@250uA null TO-220AB MOSFETs ROHS
POWER FIELD-EFFECT TRANSISTOR, 5.5A I(D), 400V, 1OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Allied Electronics, Inc. | ODG (Origin Data Global) | LCSC Electronics Technology (HK) Limited | Radwell International | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF730PBF-ND | 069350-IRF730PBF | 278-IRF730PBF | 63J7380 | 70079037 | IRF730PBF | IRF730PBF | 16352177 | IRF730PBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF730PBF | N-Channel 400V 5.5A MOSFET Transistor | N Channel Mosfet, 400V, 5.5A To-220; Channel Type Vishay | MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 1Ohm;ID 5.5A;TO-220AB;PD 74W;VGS +/-20V;-55 | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Transistor | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-3; TO-220 | TO-220 | TO-220; TO-220-3 | TO-220 | |||
| V(BR)DSS | 400 volts | 400 volts | 400 volts | 400 volts | |||||
| PD | 74000 milliwatts | 74000 milliwatts | 74000 milliwatts | 74000 milliwatts | 74000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
