Vishay Intertechnology, Inc. Single FETs, MOSFETs IRF730BPBF

Description
N-Channel 400V 6A (Tc) 104W (Tc) Through Hole TO-220AB
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Description
N-Channel 400V 6A (Tc) 104W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 742-IRF730BPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-IRF730BPBF-ND
Single FETs, MOSFETs 742-IRF730BPBF-ND
N-Channel 400V 6A (Tc) 104W (Tc) Through Hole TO-220AB

N-Channel 400V 6A (Tc) 104W (Tc) Through Hole TO-220AB

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF730BPBF - 59857-IRF730BPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF730BPBF
59857-IRF730BPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF730BPBF 59857-IRF730BPBF
Manufacturer: Vishay Win Source Part Number: 59857-IRF730BPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 104W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 311pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1 Ohm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 59857-IRF730BPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 311pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1 Ohm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

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Sheung Wan, Hong Kong
MOSFET 400V 1ohm@10V 5.5A N/Ch

MOSFET 400V 1ohm@10V 5.5A N/Ch

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF730BPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF730BPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF730BPBF
MOSFET N-CH 400V 6A TO220AB

MOSFET N-CH 400V 6A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 742-IRF730BPBF-ND 59857-IRF730BPBF IRF730BPBF IRF730BPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF730BPBF MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3
V(BR)DSS 400 volts
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