Vishay Intertechnology, Inc. Single FETs, MOSFETs IRF730AS

Description
N-Channel 400V 5.5A (Tc) 74W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
N-Channel 400V 5.5A (Tc) 74W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF730AS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF730AS-ND
Single FETs, MOSFETs IRF730AS-ND
N-Channel 400V 5.5A (Tc) 74W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 400V 5.5A (Tc) 74W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
FETs - Single - IRF730AS - 1187197-IRF730AS - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRF730AS
1187197-IRF730AS
FETs - Single - IRF730AS 1187197-IRF730AS
Manufacturer: Vishay Siliconix Win Source Part Number: 1187197-IRF730AS Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 74W Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 400V Id - Continuous Drain Current: 5.5A Rds On (Maximum) at Id, Vgs: 1Ohm at 3.3A, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 22nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 600pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187197-IRF730AS
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 74W
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 400V
Id - Continuous Drain Current: 5.5A
Rds On (Maximum) at Id, Vgs: 1Ohm at 3.3A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 22nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 600pF at 25V

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF730AS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF730AS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF730AS
MOSFET N-CH 400V 5.5A D2PAK

MOSFET N-CH 400V 5.5A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRF730AS-ND 1187197-IRF730AS IRF730AS
Product Name Single FETs, MOSFETs FETs - Single - IRF730AS Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 400 volts
Unlock Full Specs
to access all available technical data