POWER FIELD-EFFECT TRANSISTOR, 5.5A I(D), 400V, 1OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
Manufacturer: Vishay
Win Source Part Number: 017499-IRF730APBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 5.5A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 600pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1 Ohm @ 3.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
N-Channel 400V 5.5A (Tc) 74W (Tc) Through Hole TO-220AB
MOSFET N-CH 400V 5.5A TO220AB
MOSFET N-CH 400V 5.5A TO220AB
MOSFET Transistor, N Channel, 5.5 A, 400 V, 1 ohm, 10 V, 4.5 V RoHS Compliant: Yes
MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 1Ohm;ID 5.5A;TO-220AB;PD 74W;VGS +/-30V;-55
| Radwell International | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 16357357 | 017499-IRF730APBF | IRF730APBF-ND | IRF730APBF | IRF730APBF | IRF730APBF | 38K2841 | 70078857 |
| Product Name | Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF730APBF | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet Transistor, N Channel, 5.5 A, 400 V, 1 Ohm, 10 V, 4.5 V Rohs Compliant Vishay | MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 1Ohm;ID 5.5A;TO-220AB;PD 74W;VGS +/-30V;-55 |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 400 volts | 400 volts | 400 volts | |||||
| PD | 74000 milliwatts | 74000 milliwatts | 74000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3 | TO-220 |
