Vishay Intertechnology, Inc. Transistor IRF730APBF

Description
POWER FIELD-EFFECT TRANSISTOR, 5.5A I(D), 400V, 1OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
  • Transistor - 16357357 - Radwell International
    Radwell International
  • Single FETs, MOSFETs - IRF730APBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF730APBF - 017499-IRF730APBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRF730APBF-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF730APBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 1Ohm;ID 5.5A;TO-220AB;PD 74W;VGS +/-30V;-55 - 70078857 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • Mosfet Transistor, N Channel, 5.5 A, 400 V, 1 Ohm, 10 V, 4.5 V Rohs Compliant Vishay - 38K2841 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
POWER FIELD-EFFECT TRANSISTOR, 5.5A I(D), 400V, 1OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Transistor - 16357357 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16357357
Transistor 16357357
POWER FIELD-EFFECT TRANSISTOR, 5.5A I(D), 400V, 1OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 5.5A I(D), 400V, 1OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - IRF730APBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF730APBF
Single FETs, MOSFETs IRF730APBF
MOSFET N-CH 400V 5.5A TO220AB

MOSFET N-CH 400V 5.5A TO220AB

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF730APBF - 017499-IRF730APBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF730APBF
017499-IRF730APBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF730APBF 017499-IRF730APBF
Manufacturer: Vishay Win Source Part Number: 017499-IRF730APBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 5.5A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 600pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1 Ohm @ 3.3A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 017499-IRF730APBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 5.5A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 600pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1 Ohm @ 3.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRF730APBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF730APBF-ND
Single FETs, MOSFETs IRF730APBF-ND
N-Channel 400V 5.5A (Tc) 74W (Tc) Through Hole TO-220AB

N-Channel 400V 5.5A (Tc) 74W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF730APBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF730APBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF730APBF
MOSFET N-CH 400V 5.5A TO220AB

MOSFET N-CH 400V 5.5A TO220AB

Supplier's Site
MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 1Ohm;ID 5.5A;TO-220AB;PD 74W;VGS +/-30V;-55 - 70078857 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 1Ohm;ID 5.5A;TO-220AB;PD 74W;VGS +/-30V;-55
70078857
MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 1Ohm;ID 5.5A;TO-220AB;PD 74W;VGS +/-30V;-55 70078857
MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 1Ohm;ID 5.5A;TO-220AB;PD 74W;VGS +/-30V;-55

MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 1Ohm;ID 5.5A;TO-220AB;PD 74W;VGS +/-30V;-55

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRF730APBF
MOSFET IRF730APBF
MOSFET N-CH 400V HEXFET MOSFET

MOSFET N-CH 400V HEXFET MOSFET

Buy Now Datasheet
Mosfet Transistor, N Channel, 5.5 A, 400 V, 1 Ohm, 10 V, 4.5 V Rohs Compliant Vishay - 38K2841 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 5.5 A, 400 V, 1 Ohm, 10 V, 4.5 V Rohs Compliant Vishay
38K2841
Mosfet Transistor, N Channel, 5.5 A, 400 V, 1 Ohm, 10 V, 4.5 V Rohs Compliant Vishay 38K2841
MOSFET Transistor, N Channel, 5.5 A, 400 V, 1 ohm, 10 V, 4.5 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 5.5 A, 400 V, 1 ohm, 10 V, 4.5 V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Radwell International ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Allied Electronics, Inc. VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 16357357 IRF730APBF 017499-IRF730APBF IRF730APBF-ND IRF730APBF 70078857 IRF730APBF 38K2841
Product Name Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF730APBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 1Ohm;ID 5.5A;TO-220AB;PD 74W;VGS +/-30V;-55 MOSFET Mosfet Transistor, N Channel, 5.5 A, 400 V, 1 Ohm, 10 V, 4.5 V Rohs Compliant Vishay
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 400 volts 400 volts 400 volts
IDSS 5500 milliamps
PD 74000 milliwatts 74000 milliwatts 74000 milliwatts
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