Vishay Intertechnology, Inc. Single FETs, MOSFETs IRF720LPBF

Description
N-Channel 400V 3.3A (Tc) 3.1W (Ta), 50W (Tc) Through Hole TO-262-3
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Description
N-Channel 400V 3.3A (Tc) 3.1W (Ta), 50W (Tc) Through Hole TO-262-3
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - IRF720LPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF720LPBF-ND
Single FETs, MOSFETs IRF720LPBF-ND
N-Channel 400V 3.3A (Tc) 3.1W (Ta), 50W (Tc) Through Hole TO-262-3

N-Channel 400V 3.3A (Tc) 3.1W (Ta), 50W (Tc) Through Hole TO-262-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF720LPBF - 1046584-IRF720LPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF720LPBF
1046584-IRF720LPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF720LPBF 1046584-IRF720LPBF
Manufacturer: Vishay Win Source Part Number: 1046584-IRF720LPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-262-3 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 3.3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 410pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.8 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1046584-IRF720LPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-262-3
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 3.3A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 410pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.8 Ohm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF720LPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF720LPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF720LPBF
MOSFET N-CH 400V 3.3A TO262-3

MOSFET N-CH 400V 3.3A TO262-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRF720LPBF-ND 1046584-IRF720LPBF IRF720LPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF720LPBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA SOT3; TO-262-3 TO-262-3 Long Leads, I2PAK, TO-262AA
V(BR)DSS 400 volts
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