Vishay Intertechnology, Inc. Single FETs, MOSFETs IRF710SPBF

Description
N-Channel 400V 2A (Tc) 3.1W (Ta), 36W (Tc) Surface Mount D²PAK (TO-263)
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Description
N-Channel 400V 2A (Tc) 3.1W (Ta), 36W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

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Description
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Single FETs, MOSFETs - IRF710SPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF710SPBF-ND
Single FETs, MOSFETs IRF710SPBF-ND
N-Channel 400V 2A (Tc) 3.1W (Ta), 36W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 400V 2A (Tc) 3.1W (Ta), 36W (Tc) Surface Mount D²PAK (TO-263)

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF710SPBF - 017486-IRF710SPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF710SPBF
017486-IRF710SPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF710SPBF 017486-IRF710SPBF
Manufacturer: Vishay Win Source Part Number: 017486-IRF710SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 170pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.6 Ohm @ 1.2A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 017486-IRF710SPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 170pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.6 Ohm @ 1.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited

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Sheung Wan, Hong Kong
MOSFET N-CH 400V HEXFET MOSFET D2-PA

MOSFET N-CH 400V HEXFET MOSFET D2-PA

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF710SPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF710SPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF710SPBF
MOSFET N-CH 400V 2A D2PAK

MOSFET N-CH 400V 2A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRF710SPBF-ND 017486-IRF710SPBF IRF710SPBF IRF710SPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF710SPBF MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 400 volts
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