Manufacturer: Vishay
Win Source Part Number: 205309-IRF710PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 36W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 170pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.6 Ohm @ 1.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
MOSFET, N CHANNEL, 400 V, 2 A, 36 W, 3.6 OHM, TO-220, 3 PIN, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY
N-Channel 400V 2A (Tc) 36W (Tc) Through Hole TO-220AB
MOSFET N-CH 400V 2A TO220AB
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industria
Features:
N CHANNEL MOSFET, 400V, 2A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes
Transistor: N-MOSFET; unipolar; 400V; 1.2A; 36W; TO220AB
| Win Source Electronics | RS Components, Ltd. | Radwell International | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | Newark, An Avnet Company | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 205309-IRF710PBF | 5430074 | 16357317 | IRF710PBF-ND | IRF710PBF | IRF710PBF | 70079082 | 63J7372 | 880-IRF710PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF710PBF | MOSFETs | Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | 400V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A TO-220AB PACKAGE | N Channel Mosfet, 400V, 2A, To-220; Channel Type Vishay | Transistor: N-MOSFET; unipolar; 400V; 1.2A; 36W; TO220AB |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 400 volts | 400 volts | 400 volts | ||||||
| PD | 36000 milliwatts | 36000 milliwatts | 36000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; To-220ab | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220 | TO-3; TO-220 |
