Vishay Precision Group MOSFETs IRF710PBF

Description
MOSFET N-Channel 400V 2A TO220AB
Request a Quote Datasheet
Description
MOSFET N-Channel 400V 2A TO220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 5430074 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
5430074
MOSFETs 5430074
MOSFET N-Channel 400V 2A TO220AB

MOSFET N-Channel 400V 2A TO220AB

Supplier's Site
MOSFETs - 1780855 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1780855
MOSFETs 1780855
MOSFET N-Channel 400V 2A TO220AB

MOSFET N-Channel 400V 2A TO220AB

Supplier's Site
Singapore
N-Channel 400V 2A MOSFET Transistor
278-IRF710PBF
N-Channel 400V 2A MOSFET Transistor 278-IRF710PBF
N-Channel MOSFET, 400V, 2A, 3.6R, TO-220AB Product overview: IRF710PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 400V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 400V, 2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF710PBF can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 400V, 2A, 3.6R, TO-220AB Product overview: IRF710PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 400V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 400V, 2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF710PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF710PBF - 205309-IRF710PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF710PBF
205309-IRF710PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF710PBF 205309-IRF710PBF
Manufacturer: Vishay Win Source Part Number: 205309-IRF710PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 36W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 170pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.6 Ohm @ 1.2A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 205309-IRF710PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 36W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 170pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.6 Ohm @ 1.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRF710PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF710PBF-ND
Single FETs, MOSFETs IRF710PBF-ND
N-Channel 400V 2A (Tc) 36W (Tc) Through Hole TO-220AB

N-Channel 400V 2A (Tc) 36W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF710PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF710PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF710PBF
MOSFET N-CH 400V 2A TO220AB

MOSFET N-CH 400V 2A TO220AB

Supplier's Site
Transistor: N-MOSFET; unipolar; 400V; 1.2A; 36W; TO220AB - 880-IRF710PBF - Utmel Electronic Limited
Hong Kong, China
Transistor: N-MOSFET; unipolar; 400V; 1.2A; 36W; TO220AB
880-IRF710PBF
Transistor: N-MOSFET; unipolar; 400V; 1.2A; 36W; TO220AB 880-IRF710PBF
Transistor: N-MOSFET; unipolar; 400V; 1.2A; 36W; TO220AB

Transistor: N-MOSFET; unipolar; 400V; 1.2A; 36W; TO220AB

Supplier's Site
Transistor - 16357317 - Radwell International
Willingboro, NJ, United States
Transistor
16357317
Transistor 16357317
MOSFET, N CHANNEL, 400 V, 2 A, 36 W, 3.6 OHM, TO-220, 3 PIN, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY

MOSFET, N CHANNEL, 400 V, 2 A, 36 W, 3.6 OHM, TO-220, 3 PIN, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 400V HEXFET MOSFET

MOSFET N-CH 400V HEXFET MOSFET

Buy Now Datasheet
N Channel Mosfet, 400V, 2A, To-220; Channel Type Vishay - 63J7372 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 400V, 2A, To-220; Channel Type Vishay
63J7372
N Channel Mosfet, 400V, 2A, To-220; Channel Type Vishay 63J7372
N CHANNEL MOSFET, 400V, 2A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 400V, 2A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes

Supplier's Site
400V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A TO-220AB PACKAGE - 70079082 - Allied Electronics, Inc.
Fort Worth, TX, USA
400V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A TO-220AB PACKAGE
70079082
400V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A TO-220AB PACKAGE 70079082
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industria l applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Features: Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-Free Available

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Features:

  • Dynamic dV/dt Rating
  • Repetitive Avalanche Rated
  • Fast Switching
  • Ease of Paralleling
  • Simple Drive Requirements
  • Lead (Pb)-Free Available
Supplier's Site

Technical Specifications

  RS Components, Ltd. ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited Radwell International VAST STOCK CO., LIMITED Newark, An Avnet Company Allied Electronics, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 5430074 278-IRF710PBF 205309-IRF710PBF IRF710PBF-ND IRF710PBF 880-IRF710PBF 16357317 IRF710PBF 63J7372 70079082
Product Name MOSFETs N-Channel 400V 2A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF710PBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor: N-MOSFET; unipolar; 400V; 1.2A; 36W; TO220AB Transistor MOSFET N Channel Mosfet, 400V, 2A, To-220; Channel Type Vishay 400V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A TO-220AB PACKAGE
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
MOSFET Operating Mode Enhancement
Package Type TO-220; To-220ab TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-220; TO-220-3 TO-3; TO-220 TO-220
Number of units in IC 1 1
PD 36000 milliwatts 36000 milliwatts 36000 milliwatts 36000 milliwatts
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