Manufacturer: Vishay
Win Source Part Number: 017457-IRF644PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Family Name: IRF644
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 14A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 68nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 280 mOhm @ 8.4A, 10V
Alternative Parts (Cross-Reference): MTP16N25E; STP16NS25; TK13E25D; TK13E25D,S1X(S;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
MOSFET N-CH 250V 14A TO220AB
TRANSISTOR, MOSFET, THROUGH HOLE, 1 CHANNEL, 14 A, 250 V, SINGLE. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-Channel 250V 14A TO220AB
N-Channel 250V 14A (Tc) 125W (Tc) Through Hole TO-220AB
MOSFET Transistor, N Channel, 14 A, 250 V, 280 mohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET N-CH 250V 14A TO220AB
MOSFET, Power;N-Ch;VDSS 250V;RDS(ON) 0.28Ohm;ID 14A;TO-220AB;PD 125W;VGS +/-20V
250V 14A 280mΩ@10V,8.4A 125W 4V@250uA N Channel TO-220AB MOSFETs ROHS
| Win Source Electronics | ODG (Origin Data Global) | Radwell International | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 017457-IRF644PBF | IRF644PBF | 16357297 | 5429305 | 5429305P | IRF644PBF-ND | 38K2827 | IRF644PBF | IRF644PBF | 70078856 | 17930-IRF644PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF644PBF | Single FETs, MOSFETs | Transistor | MOSFETs | MOSFETs | Single FETs, MOSFETs | Mosfet Transistor, N Channel, 14 A, 250 V, 280 Mohm, 10 V, 4 V Rohs Compliant Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 250V;RDS(ON) 0.28Ohm;ID 14A;TO-220AB;PD 125W;VGS +/-20V | 250V 14A 280mΩ@10V,8.4A 125W 4V@250uA N Channel TO-220AB MOSFETs ROHS |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 250 volts | 250 volts | 250 volts | ||||||||
| PD | 125000 milliwatts | 125000 milliwatts | 125000 milliwatts | ||||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; To-220ab | TO-220; TO-220 | TO-220; TO-220-3 | TO-3 | TO-220; TO-220-3 | TO-220 |
