Vishay Intertechnology, Inc. Single FETs, MOSFETs IRF644NSPBF

Description
N-Channel 250V 14A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263)
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Description
N-Channel 250V 14A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

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Single FETs, MOSFETs - IRF644NSPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF644NSPBF-ND
Single FETs, MOSFETs IRF644NSPBF-ND
N-Channel 250V 14A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 250V 14A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF644NSPBF - 1046545-IRF644NSPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF644NSPBF
1046545-IRF644NSPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF644NSPBF 1046545-IRF644NSPBF
Manufacturer: Vishay Win Source Part Number: 1046545-IRF644NSPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 54nC @ 10V Max Input Capacitance: 1060pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 240 mOhm @ 8.4A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 1046545-IRF644NSPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 14A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 54nC @ 10V
Max Input Capacitance: 1060pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 240 mOhm @ 8.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF644NSPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF644NSPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF644NSPBF
MOSFET N-CH 250V 14A D2PAK

MOSFET N-CH 250V 14A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRF644NSPBF-ND 1046545-IRF644NSPBF IRF644NSPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF644NSPBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 250 volts
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