Vishay Intertechnology, Inc. Single FETs, MOSFETs IRF644

Description
N-Channel 250V 14A (Tc) 125W (Tc) Through Hole TO-220AB
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Description
N-Channel 250V 14A (Tc) 125W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IRF644-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF644-ND
Single FETs, MOSFETs IRF644-ND
N-Channel 250V 14A (Tc) 125W (Tc) Through Hole TO-220AB

N-Channel 250V 14A (Tc) 125W (Tc) Through Hole TO-220AB

Buy Now Datasheet
FETs - Single - IRF644 - 1187121-IRF644 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRF644
1187121-IRF644
FETs - Single - IRF644 1187121-IRF644
Manufacturer: Vishay Siliconix Win Source Part Number: 1187121-IRF644 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 125W Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Industrial Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 250V Id - Continuous Drain Current: 14A Rds On (Maximum) at Id, Vgs: 280mOhm at 8.4A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 68nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1300pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187121-IRF644
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 125W
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Industrial
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 250V
Id - Continuous Drain Current: 14A
Rds On (Maximum) at Id, Vgs: 280mOhm at 8.4A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 68nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1300pF at 25V

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Technical Specifications

  DigiKey Win Source Electronics
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRF644-ND 1187121-IRF644
Product Name Single FETs, MOSFETs FETs - Single - IRF644
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3
V(BR)DSS 250 volts
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