Manufacturer: Vishay
Win Source Part Number: 140784-IRF640SPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 180 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
N-Channel MOSFET, 200V, 18A, 180mR Rds On, D2PAK Product overview: IRF640SPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF640SPBF can be used for catalog matching and distributor lookup.
N-Channel 200V 18A (Tc) 3.1W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 200V 18A D2PAK
MOSFET N-CH 200V 18A D2PAK
N CHANNEL MOSFET, 200V, 18A, D2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET, N-CH, 200V, 18A, TO-263 ROHS COMPLIANT: YES
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 140784-IRF640SPBF | 278-IRF640SPBF | IRF640SPBF-ND | IRF640SPBF | IRF640SPBF | IRF640SPBF | 63J7356 | 56AJ9914 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF640SPBF | N-Channel 200V 18A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 200V, 18A, D2-Pak; Channel Type Vishay | Mosfet, N-Ch, 200V, 18A, To-263 Rohs Compliant Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 200 volts | 200 volts | ||||||
| PD | 3100 to 130000 milliwatts | 130000 milliwatts | 3100 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
