Vishay Precision Group Single FETs, MOSFETs IRF640SPBF

Description
N-Channel 200V 18A (Tc) 3.1W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
N-Channel 200V 18A (Tc) 3.1W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF640SPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF640SPBF-ND
Single FETs, MOSFETs IRF640SPBF-ND
N-Channel 200V 18A (Tc) 3.1W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 200V 18A (Tc) 3.1W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - IRF640SPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF640SPBF
Single FETs, MOSFETs IRF640SPBF
MOSFET N-CH 200V 18A D2PAK

MOSFET N-CH 200V 18A D2PAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF640SPBF - 140784-IRF640SPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF640SPBF
140784-IRF640SPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF640SPBF 140784-IRF640SPBF
Manufacturer: Vishay Win Source Part Number: 140784-IRF640SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 130W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 1300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 180 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 140784-IRF640SPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 180 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
N Channel Mosfet, 200V, 18A, D2-Pak; Channel Type Vishay - 63J7356 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 200V, 18A, D2-Pak; Channel Type Vishay
63J7356
N Channel Mosfet, 200V, 18A, D2-Pak; Channel Type Vishay 63J7356
N CHANNEL MOSFET, 200V, 18A, D2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 200V, 18A, D2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Mosfet, N-Ch, 200V, 18A, To-263 Rohs Compliant Vishay - 56AJ9914 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 200V, 18A, To-263 Rohs Compliant Vishay
56AJ9914
Mosfet, N-Ch, 200V, 18A, To-263 Rohs Compliant Vishay 56AJ9914
MOSFET, N-CH, 200V, 18A, TO-263 ROHS COMPLIANT: YES

MOSFET, N-CH, 200V, 18A, TO-263 ROHS COMPLIANT: YES

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Chan 200V 18 Amp

MOSFET N-Chan 200V 18 Amp

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF640SPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF640SPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF640SPBF
MOSFET N-CH 200V 18A D2PAK

MOSFET N-CH 200V 18A D2PAK

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRF640SPBF-ND IRF640SPBF 140784-IRF640SPBF 63J7356 56AJ9914 IRF640SPBF IRF640SPBF
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF640SPBF N Channel Mosfet, 200V, 18A, D2-Pak; Channel Type Vishay Mosfet, N-Ch, 200V, 18A, To-263 Rohs Compliant Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-3 TO-3; TO-263 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 200 volts 200 volts
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