Vishay Intertechnology, Inc. FETs - Single - IRF640S IRF640S

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187117-IRF640S Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.nxp.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 3.1W, 130W Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 18A Rds On (Maximum) at Id, Vgs: 180mOhm at 11A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 70nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1300pF at 25V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187117-IRF640S Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.nxp.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 3.1W, 130W Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 18A Rds On (Maximum) at Id, Vgs: 180mOhm at 11A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 70nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1300pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRF640S - 1187117-IRF640S - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRF640S
1187117-IRF640S
FETs - Single - IRF640S 1187117-IRF640S
Manufacturer: Vishay Siliconix Win Source Part Number: 1187117-IRF640S Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.nxp.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 3.1W, 130W Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 18A Rds On (Maximum) at Id, Vgs: 180mOhm at 11A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 70nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1300pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187117-IRF640S
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.nxp.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 3.1W, 130W
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 18A
Rds On (Maximum) at Id, Vgs: 180mOhm at 11A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 70nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1300pF at 25V

Buy Now
Single FETs, MOSFETs - IRF640S-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF640S-ND
Single FETs, MOSFETs IRF640S-ND
N-Channel 200V 18A (Tc) 3.1W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 200V 18A (Tc) 3.1W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - IRF640S - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF640S
Single FETs, MOSFETs IRF640S
MOSFET N-CH 200V 18A D2PAK

MOSFET N-CH 200V 18A D2PAK

Supplier's Site Datasheet
Singapore
200V 18A MOSFET Transistor
278-IRF640S
200V 18A MOSFET Transistor 278-IRF640S
MOSFET N-CH 200V 18A D2PAK Product overview: IRF640S from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF640S can be used for catalog matching and distributor lookup.

MOSFET N-CH 200V 18A D2PAK Product overview: IRF640S from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF640S can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF640S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF640S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF640S
MOSFET N-CH 200V 18A D2PAK

MOSFET N-CH 200V 18A D2PAK

Supplier's Site
MOSFET N-CH 200V 18A D2PAK - 880-IRF640S - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 200V 18A D2PAK
880-IRF640S
MOSFET N-CH 200V 18A D2PAK 880-IRF640S
MOSFET N-CH 200V 18A D2PAK

MOSFET N-CH 200V 18A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category RF Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1187117-IRF640S IRF640S-ND IRF640S 278-IRF640S IRF640S 880-IRF640S
Product Name FETs - Single - IRF640S Single FETs, MOSFETs Single FETs, MOSFETs 200V 18A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 200V 18A D2PAK
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Package Type TO-263; SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Tube TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packing Method Tube; Tube Tube Tube; Tube Tube; Tube
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Transistor Technology / Material MOSFET (Metal Oxide)
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