MOSFET N-CH 200V 18A D2PAK Product overview: IRF640S from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF640S can be used for catalog matching and distributor lookup.
MOSFET N-CH 200V 18A D2PAK
N-Channel 200V 18A (Tc) 3.1W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: Vishay Siliconix
Win Source Part Number: 1187117-IRF640S
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.nxp.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 3.1W, 130W
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 18A
Rds On (Maximum) at Id, Vgs: 180mOhm at 11A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 70nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1300pF at 25V
MOSFET N-CH 200V 18A D2PAK
MOSFET N-CH 200V 18A D2PAK
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRF640S | IRF640S | IRF640S-ND | 1187117-IRF640S | 880-IRF640S | IRF640S |
| Product Name | 200V 18A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | FETs - Single - IRF640S | MOSFET N-CH 200V 18A D2PAK | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 3100 milliwatts | 3100 milliwatts | 3100 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tube | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | |
| Packing Method | Tube | Tube; Tube | Tube; Tube | Tube; Tube | ||
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel |
