Vishay Precision Group Single FETs, MOSFETs IRF640PBF

Description
MOSFET N-CH 200V 18A TO220AB
  • Single FETs, MOSFETs - IRF640PBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Transistor - 16357273 - Radwell International
    Radwell International
  • Single FETs, MOSFETs - IRF640PBF-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF640PBF - 017454-IRF640PBF - Win Source Electronics
    Win Source Electronics
  • MOSFETs - 5410452 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.18Ohm;ID 18A;TO-220AB;PD 125W;VGS +/-20V - 70078855 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • N Channel Mosfet, 200V, 18A, To-220; Channel Type Vishay - 63J7355 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet Transistor, N Channel, 18 A, 200 V, 180 Mohm, 10 V, 4 V Rohs Compliant Vishay - 38K2824 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF640PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
MOSFET N-CH 200V 18A TO220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF640PBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF640PBF
Single FETs, MOSFETs IRF640PBF
MOSFET N-CH 200V 18A TO220AB

MOSFET N-CH 200V 18A TO220AB

Supplier's Site Datasheet
Transistor - 16357273 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16357273
Transistor 16357273
POWER FIELD-EFFECT TRANSISTOR, 18A I(D), 200V, 0.18OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 18A I(D), 200V, 0.18OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - IRF640PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF640PBF-ND
Single FETs, MOSFETs IRF640PBF-ND
N-Channel 200V 18A (Tc) 125W (Tc) Through Hole TO-220AB

N-Channel 200V 18A (Tc) 125W (Tc) Through Hole TO-220AB

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF640PBF - 017454-IRF640PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF640PBF
017454-IRF640PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF640PBF 017454-IRF640PBF
Manufacturer: Vishay Win Source Part Number: 017454-IRF640PBF Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Family Name: IRF640 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 1300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 180 mOhm @ 11A, 10V Alternative Parts (Cross-Reference): IRF640; IRF640G; Introduction Date: March 27, 2007 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance Application Field: Used in Power Management

Manufacturer: Vishay
Win Source Part Number: 017454-IRF640PBF
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Family Name: IRF640
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 180 mOhm @ 11A, 10V
Alternative Parts (Cross-Reference): IRF640; IRF640G;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management

Buy Now Datasheet
MOSFETs - 5410452 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
5410452
MOSFETs 5410452
MOSFET N-Channel 200V 18A TO220AB

MOSFET N-Channel 200V 18A TO220AB

Supplier's Site
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.18Ohm;ID 18A;TO-220AB;PD 125W;VGS +/-20V - 70078855 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.18Ohm;ID 18A;TO-220AB;PD 125W;VGS +/-20V
70078855
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.18Ohm;ID 18A;TO-220AB;PD 125W;VGS +/-20V 70078855
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.18Ohm;ID 18A;TO-220AB;PD 125W;VGS +/-20V

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.18Ohm;ID 18A;TO-220AB;PD 125W;VGS +/-20V

Supplier's Site
N Channel Mosfet, 200V, 18A, To-220; Channel Type Vishay - 63J7355 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 200V, 18A, To-220; Channel Type Vishay
63J7355
N Channel Mosfet, 200V, 18A, To-220; Channel Type Vishay 63J7355
N CHANNEL MOSFET, 200V, 18A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 200V, 18A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes

Supplier's Site
Mosfet Transistor, N Channel, 18 A, 200 V, 180 Mohm, 10 V, 4 V Rohs Compliant Vishay - 38K2824 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 18 A, 200 V, 180 Mohm, 10 V, 4 V Rohs Compliant Vishay
38K2824
Mosfet Transistor, N Channel, 18 A, 200 V, 180 Mohm, 10 V, 4 V Rohs Compliant Vishay 38K2824
MOSFET Transistor, N Channel, 18 A, 200 V, 180 mohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 18 A, 200 V, 180 mohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRF640PBF
MOSFET IRF640PBF
MOSFET N-CH 200V HEXFET MOSFET

MOSFET N-CH 200V HEXFET MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF640PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF640PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF640PBF
MOSFET N-CH 200V 18A TO220AB

MOSFET N-CH 200V 18A TO220AB

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IRF640PBF
Triode/MOS Tube/Transistor >> MOSFETs IRF640PBF
200V 18A 180mΩ@10V,11A 125W 4V@250uA N Channel ITO-220AB-3 MOSFETs ROHS

200V 18A 180mΩ@10V,11A 125W 4V@250uA N Channel ITO-220AB-3 MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) Radwell International DigiKey Win Source Electronics RS Components, Ltd. Allied Electronics, Inc. Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRF640PBF 16357273 IRF640PBF-ND 017454-IRF640PBF 5410452 70078855 63J7355 38K2824 IRF640PBF IRF640PBF IRF640PBF
Product Name Single FETs, MOSFETs Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF640PBF MOSFETs MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.18Ohm;ID 18A;TO-220AB;PD 125W;VGS +/-20V N Channel Mosfet, 200V, 18A, To-220; Channel Type Vishay Mosfet Transistor, N Channel, 18 A, 200 V, 180 Mohm, 10 V, 4 V Rohs Compliant Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 200 volts 200 volts 200 volts 200 volts
IDSS 18000 milliamps 18000 milliamps
PD 125000 milliwatts 125000 milliwatts 125000 milliwatts 125000 milliwatts
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