Manufacturer: Vishay
Win Source Part Number: 017454-IRF640PBF
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Family Name: IRF640
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 180 mOhm @ 11A, 10V
Alternative Parts (Cross-Reference): IRF640; IRF640G;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management
N-Channel 200V 18A (Tc) 125W (Tc) Through Hole TO-220AB
MOSFET N-CH 200V 18A TO220AB
POWER FIELD-EFFECT TRANSISTOR, 18A I(D), 200V, 0.18OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
N CHANNEL MOSFET, 200V, 18A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes
MOSFET Transistor, N Channel, 18 A, 200 V, 180 mohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.18Ohm;ID 18A;TO-220AB;PD 125W;VGS +/-20V
MOSFET N-CH 200V 18A TO220AB
200V 18A 180mΩ@10V,11A 125W 4V@250uA N Channel ITO-220AB-3 MOSFETs ROHS
| Win Source Electronics | DigiKey | RS Components, Ltd. | ODG (Origin Data Global) | Radwell International | Newark, An Avnet Company | Newark, An Avnet Company | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 017454-IRF640PBF | IRF640PBF-ND | 5410452 | IRF640PBF | 16357273 | 63J7355 | 38K2824 | 70078855 | IRF640PBF | IRF640PBF | IRF640PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF640PBF | Single FETs, MOSFETs | MOSFETs | Single FETs, MOSFETs | Transistor | N Channel Mosfet, 200V, 18A, To-220; Channel Type Vishay | Mosfet Transistor, N Channel, 18 A, 200 V, 180 Mohm, 10 V, 4 V Rohs Compliant Vishay | MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.18Ohm;ID 18A;TO-220AB;PD 125W;VGS +/-20V | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | 200 volts | |||||||
| PD | 125000 milliwatts | 125000 milliwatts | 125000 milliwatts | 125000 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; To-220ab | TO-220; TO-220-3 | TO-3; TO-220 | TO-3 | TO-220 | TO-220; TO-220-3 | TO-220 |
