Vishay Precision Group N Channel Mosfet, 200V, 18A, To-220; Channel Type Vishay IRF640PBF.

Description
N CHANNEL MOSFET, 200V, 18A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes
Description
N CHANNEL MOSFET, 200V, 18A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The IRF640PBF is a N-channel MOSFET in a TO-220AB package, designed for high-frequency switching and high-power applications. It has a drain-source voltage rating of 200 V, a continuous drain current of 18 A at 25 °C, and a maximum on-state resistance of 0.18 Ω at a gate-source voltage of 10 V. The device is rated for repetitive avalanche current up to 18 A and repetitive avalanche energy of 13 mJ. It features fast switching, low gate charge totaling 70 nC, and complies with RoHS Directive 2002/95/EC. The TO-220AB package offers low thermal resistance and is suitable for power dissipation levels up to 50 W.

Datasheet Summary
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The IRF640PBF is a N-channel MOSFET in a TO-220AB package, designed for high-frequency switching and high-power applications. It has a drain-source voltage rating of 200 V, a continuous drain current of 18 A at 25 °C, and a maximum on-state resistance of 0.18 Ω at a gate-source voltage of 10 V. The device is rated for repetitive avalanche current up to 18 A and repetitive avalanche energy of 13 mJ. It features fast switching, low gate charge totaling 70 nC, and complies with RoHS Directive 2002/95/EC. The TO-220AB package offers low thermal resistance and is suitable for power dissipation levels up to 50 W.

Suppliers

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Supplier Links
N Channel Mosfet, 200V, 18A, To-220; Channel Type Vishay - 26AC0609 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 200V, 18A, To-220; Channel Type Vishay
26AC0609
N Channel Mosfet, 200V, 18A, To-220; Channel Type Vishay 26AC0609
N CHANNEL MOSFET, 200V, 18A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 200V, 18A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 26AC0609
Product Name N Channel Mosfet, 200V, 18A, To-220; Channel Type Vishay
Polarity N-Channel
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