The IRF640PBF is a N-channel MOSFET in a TO-220AB package, designed for high-frequency switching and high-power applications. It has a drain-source voltage rating of 200 V, a continuous drain current of 18 A at 25 °C, and a maximum on-state resistance of 0.18 Ω at a gate-source voltage of 10 V. The device is rated for repetitive avalanche current up to 18 A and repetitive avalanche energy of 13 mJ. It features fast switching, low gate charge totaling 70 nC, and complies with RoHS Directive 2002/95/EC. The TO-220AB package offers low thermal resistance and is suitable for power dissipation levels up to 50 W.
N CHANNEL MOSFET, 200V, 18A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 26AC0609 |
| Product Name | N Channel Mosfet, 200V, 18A, To-220; Channel Type Vishay |
| Polarity | N-Channel |