MOSFET N-CH 200V 18A TO220AB
N-Channel 200V 18A (Tc) 125W (Tc) Through Hole TO-220AB
MOSFET N-CH 200V 18A TO220AB
MOSFET, N-CH, 200V, 18A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V
| ODG (Origin Data Global) | DigiKey | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF640PBF-BE3 | 742-IRF640PBF-BE3-ND | IRF640PBF-BE3 | 78AH6378 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 200V, 18A, To-220Ab; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 200 volts | |||
| IDSS | 18000 milliamps | 18000 milliamps |
