Vishay Precision Group Single FETs, MOSFETs IRF634PBF

Description
N-Channel 250V 8.1A (Tc) 74W (Tc) Through Hole TO-220AB
Request a Quote Datasheet
Description
N-Channel 250V 8.1A (Tc) 74W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF634PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF634PBF-ND
Single FETs, MOSFETs IRF634PBF-ND
N-Channel 250V 8.1A (Tc) 74W (Tc) Through Hole TO-220AB

N-Channel 250V 8.1A (Tc) 74W (Tc) Through Hole TO-220AB

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF634PBF - 017452-IRF634PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF634PBF
017452-IRF634PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF634PBF 017452-IRF634PBF
Manufacturer: Vishay Win Source Part Number: 017452-IRF634PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 8.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 41nC @ 10V Max Input Capacitance: 770pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 450 mOhm @ 5.1A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 017452-IRF634PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 8.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 41nC @ 10V
Max Input Capacitance: 770pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 450 mOhm @ 5.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRF634PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF634PBF
Single FETs, MOSFETs IRF634PBF
MOSFET N-CH 250V 8.1A TO220AB

MOSFET N-CH 250V 8.1A TO220AB

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-CH 250V HEXFET MOSFET

MOSFET N-CH 250V HEXFET MOSFET

Buy Now Datasheet
N Channel Mosfet, 250V, 8.1A To-220; Channel Type Vishay - 63J7347 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 250V, 8.1A To-220; Channel Type Vishay
63J7347
N Channel Mosfet, 250V, 8.1A To-220; Channel Type Vishay 63J7347
N CHANNEL MOSFET, 250V, 8.1A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:8.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 250V, 8.1A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:8.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF634PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF634PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF634PBF
MOSFET N-CH 250V 8.1A TO220AB

MOSFET N-CH 250V 8.1A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRF634PBF-ND 017452-IRF634PBF IRF634PBF IRF634PBF 63J7347 IRF634PBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF634PBF Single FETs, MOSFETs MOSFET N Channel Mosfet, 250V, 8.1A To-220; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-3; TO-220 TO-220; TO-220-3
V(BR)DSS 250 volts 250 volts
PD 74000 milliwatts 74000 milliwatts
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