Vishay Intertechnology, Inc. FETs - Single - IRF634 IRF634

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187106-IRF634 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 74W Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 250V Id - Continuous Drain Current: 8.1A Rds On (Maximum) at Id, Vgs: 450mOhm at 5.1A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 41nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 770pF at 25V
Request a Quote Datasheet
Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187106-IRF634 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 74W Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 250V Id - Continuous Drain Current: 8.1A Rds On (Maximum) at Id, Vgs: 450mOhm at 5.1A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 41nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 770pF at 25V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRF634 - 1187106-IRF634 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRF634
1187106-IRF634
FETs - Single - IRF634 1187106-IRF634
Manufacturer: Vishay Siliconix Win Source Part Number: 1187106-IRF634 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 74W Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 250V Id - Continuous Drain Current: 8.1A Rds On (Maximum) at Id, Vgs: 450mOhm at 5.1A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 41nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 770pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187106-IRF634
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 74W
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 250V
Id - Continuous Drain Current: 8.1A
Rds On (Maximum) at Id, Vgs: 450mOhm at 5.1A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 41nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 770pF at 25V

Buy Now
Single FETs, MOSFETs - IRF634IR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF634IR-ND
Single FETs, MOSFETs IRF634IR-ND
N-Channel 250V 8.1A (Tc) 74W (Tc) Through Hole TO-220AB

N-Channel 250V 8.1A (Tc) 74W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Singapore
250V 8.1A MOSFET Transistor
278-IRF634
250V 8.1A MOSFET Transistor 278-IRF634
MOSFET N-CH 250V 8.1A TO220AB Product overview: IRF634 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 8.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 8.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF634 can be used for catalog matching and distributor lookup.

MOSFET N-CH 250V 8.1A TO220AB Product overview: IRF634 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 8.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 8.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF634 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Transistors - MOSFETs - IRF634 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Transistors - MOSFETs
IRF634
Integrated Circuits (ICs) - Transistors - MOSFETs IRF634
Integrated Circuits (ICs) - Transistors - MOSFETs

Integrated Circuits (ICs) - Transistors - MOSFETs

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1187106-IRF634 IRF634IR-ND 278-IRF634 IRF634
Product Name FETs - Single - IRF634 Single FETs, MOSFETs 250V 8.1A MOSFET Transistor Integrated Circuits (ICs) - Transistors - MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 250 volts
PD 74000 milliwatts 74000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SA1346-SSH-AC - 855028-2SA1346-SSH-AC - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT - TGF2023-2-01 - Qorvo
Specs
Transistor Technology / Material GaN on SiC
Package Type Die
Power Gain 18 dB
View Details
3 suppliers
GaAs Fet Switches - KCB822 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 6000 MHz
View Details