Vishay Precision Group Single FETs, MOSFETs IRF630STRLPBF

Description
N-Channel 200V 9A (Tc) 3W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
N-Channel 200V 9A (Tc) 3W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF630STRLPBFDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF630STRLPBFDKR-ND
Single FETs, MOSFETs IRF630STRLPBFDKR-ND
N-Channel 200V 9A (Tc) 3W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 200V 9A (Tc) 3W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - IRF630STRLPBFCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF630STRLPBFCT-ND
Single FETs, MOSFETs IRF630STRLPBFCT-ND
N-Channel 200V 9A (Tc) 3W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 200V 9A (Tc) 3W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - IRF630STRLPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF630STRLPBFTR-ND
Single FETs, MOSFETs IRF630STRLPBFTR-ND
N-Channel 200V 9A (Tc) 3W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 200V 9A (Tc) 3W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF630STRLPBF - 1046537-IRF630STRLPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF630STRLPBF
1046537-IRF630STRLPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF630STRLPBF 1046537-IRF630STRLPBF
Manufacturer: Vishay Win Source Part Number: 1046537-IRF630STRLPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 43nC @ 10V Max Input Capacitance: 800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 400 mOhm @ 5.4A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1046537-IRF630STRLPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 43nC @ 10V
Max Input Capacitance: 800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 400 mOhm @ 5.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Chan 200V 9.0 Amp

MOSFET N-Chan 200V 9.0 Amp

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF630STRLPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF630STRLPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF630STRLPBF
MOSFET N-CH 200V 9A D2PAK

MOSFET N-CH 200V 9A D2PAK

Supplier's Site
N Channel Mosfet, 200V, 9A, Smd-220; Channel Type Vishay - 41K2322 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 200V, 9A, Smd-220; Channel Type Vishay
41K2322
N Channel Mosfet, 200V, 9A, Smd-220; Channel Type Vishay 41K2322
N CHANNEL MOSFET, 200V, 9A, SMD-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 200V, 9A, SMD-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRF630STRLPBFDKR-ND 1046537-IRF630STRLPBF IRF630STRLPBF IRF630STRLPBF 41K2322
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF630STRLPBF MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 200V, 9A, Smd-220; Channel Type Vishay
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK (TO-263) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3
V(BR)DSS 200 volts
PD 3000 to 74000 milliwatts
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