N-Channel MOSFET, 200V, 9A, 400mR Rds On, SMD Product overview: IRF630STRLPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 200V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 200V, 9A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IRF630STRLPBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1046537-IRF630STRLPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 43nC @ 10V
Max Input Capacitance: 800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 400 mOhm @ 5.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
N-Channel 200V 9A (Tc) 3W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 200V 9A (Tc) 3W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 200V 9A (Tc) 3W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 200V 9A D2PAK
N CHANNEL MOSFET, 200V, 9A, SMD-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-IRF630STRLPBF | 1046537-IRF630STRLPBF | IRF630STRLPBFDKR-ND | IRF630STRLPBF | IRF630STRLPBF | 41K2322 |
| Product Name | N-Channel SMD 200V 9A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF630STRLPBF | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 200V, 9A, Smd-220; Channel Type Vishay |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| PD | 3000 milliwatts | 3000 to 74000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||
| V(BR)DSS | 200 volts |
