Vishay Precision Group Single FETs, MOSFETs IRF630PBF

N-Channel 200V 9A (Tc) 74W (Tc) Through Hole TO-220AB

N-Channel MOSFET, 200V, 9A, 400mR Rds On, TO-220AB Product overview: IRF630PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF630PBF can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 205302-IRF630PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 74W (Tc)
Family Name: IRF630
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 43nC @ 10V
Max Input Capacitance: 800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 400 mOhm @ 5.4A, 10V
Alternative Parts (Cross-Reference): HIRF630; BUZ 73 L; BUZ32HXKSA1; FQP630TSTU-NL;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China, Israel, Mexico, Taiwan
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

N channel Mosfet

N channel Mosfet

N channel Mosfet