Vishay Precision Group MOSFETs IRF630PBF

Description
N channel Mosfet
Request a Quote Datasheet
Description
N channel Mosfet
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 2567275P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2567275P
MOSFETs 2567275P
N channel Mosfet

N channel Mosfet

Supplier's Site
MOSFETs - 2567275 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2567275
MOSFETs 2567275
N channel Mosfet

N channel Mosfet

Supplier's Site
MOSFETs - 2567274 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2567274
MOSFETs 2567274
N channel Mosfet

N channel Mosfet

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF630PBF - 205302-IRF630PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF630PBF
205302-IRF630PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF630PBF 205302-IRF630PBF
Manufacturer: Vishay Win Source Part Number: 205302-IRF630PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 74W (Tc) Family Name: IRF630 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 43nC @ 10V Max Input Capacitance: 800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 400 mOhm @ 5.4A, 10V Alternative Parts (Cross-Reference): HIRF630; BUZ 73 L; BUZ32HXKSA1; FQP630TSTU-NL; Introduction Date: March 27, 2007 ECCN: EAR99 Country of Origin: China, Israel, Mexico, Taiwan Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 205302-IRF630PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 74W (Tc)
Family Name: IRF630
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 43nC @ 10V
Max Input Capacitance: 800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 400 mOhm @ 5.4A, 10V
Alternative Parts (Cross-Reference): HIRF630; BUZ 73 L; BUZ32HXKSA1; FQP630TSTU-NL;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China, Israel, Mexico, Taiwan
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRF630PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF630PBF-ND
Single FETs, MOSFETs IRF630PBF-ND
N-Channel 200V 9A (Tc) 74W (Tc) Through Hole TO-220AB

N-Channel 200V 9A (Tc) 74W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-CH 200V HEXFET MOSFET

MOSFET N-CH 200V HEXFET MOSFET

Buy Now Datasheet
N Channel Mosfet, 200V, 9A; Channel Type Vishay - 31K2169 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 200V, 9A; Channel Type Vishay
31K2169
N Channel Mosfet, 200V, 9A; Channel Type Vishay 31K2169
N CHANNEL MOSFET, 200V, 9A; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. of Pins:3Pins RoHS Compliant: Yes

N CHANNEL MOSFET, 200V, 9A; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF630PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF630PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF630PBF
MOSFET N-CH 200V 9A TO220AB

MOSFET N-CH 200V 9A TO220AB

Supplier's Site

Technical Specifications

  RS Components, Ltd. Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 2567275P 205302-IRF630PBF IRF630PBF-ND IRF630PBF 31K2169 IRF630PBF
Product Name MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF630PBF Single FETs, MOSFETs MOSFET N Channel Mosfet, 200V, 9A; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type TO-220; TO-220 TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-3 TO-220; TO-220-3
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 200 volts
PD 74000 milliwatts
Unlock Full Specs
to access all available technical data